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| NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current V(BR)CEO IC = 100mA, IB = 0, Note 1 ICEO ICER Emitter Cutoff Current IEBO VCE = 50V, IE = 0 VCB = 100V, RBE = 1k VCB = 100V, RBE = 1k, TA = +150C VBE = 5V, IC = 0 100 - - - - - - - - - - 3.0 1.0 5.0 5.0 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VBE VCE = 3V, IC = 10A IC = 10A, IB = 40mA IC = 16A, IB = 80mA Base-Emitter Voltage VCE = 3V, IC = 10A 1000 - - - - - - - - 2.5 4.0 3.0 V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% NTE249 C B .350 (8.89) .135 (3.45) Max .875 (22.2) Dia Max Seating Plane E .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 (16.9) NTE250 .215 (5.45) C B .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case E |
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