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| Datasheet File OCR Text: |
| NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual-in-line packages. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Total Device Surge Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6000V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4242V Steady-State Isolation Voltage (Input to Output), VISO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4500V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3200V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +85C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Infrared Emitting Diode (Emitter) Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1s, PRR 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67mW/C Phototransistor (Detector) Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Infrared Emitting Diode Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance Phototransistor Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IF = 0 Emitter-Collector Breakdown Voltage V(BR)ECO IE = 100A, IF = 0 Collector Dark Current Capacitance Coupled Characteristics DC Current Transfer Ratio Collector-Emitter Saturation Voltage Isolation Resistance Input to Output Capacitance Turn-On Time CTR VCE(sat) RIO Cio ton toff IF = 10mA, VCE = 10V IF = 10mA, IC = 500mA Input to Output Voltage = 500VDC, Note 1 Input to Output Voltage = 0, f = 1MHz, Note 1 VCE = 10V, IC = 2mA, RL = 100 VCE = 5V, IF = 10mA, RL = 10k Turn-Off Time VCE = 10V, IC = 2mA, RL = 100 VCE = 5V, IF = 10mA, RL = 10k 20 - 100 - - - - - - 0.1 - 0.5 9 4 6.5 165 - 0.4 - - - - - - % V G pF s s s s ICEO Cce VCE = 10V, IF = 0 VCE = 5V, f = 1MHz 30 6 - - - - 5 3.3 - - 100 - V V nA pF V(BR)R VF IR Ci IR = 10A IF = 60mA VR = 3V V = 0, f = 1MHz 4 - - - - - - 30 - 1.7 1.0 - V V A pF Symbol Test Conditions Min Typ Max Unit Note 1. Measured with input diode leads shorted together, and output detector leads shorted together. + E D + .375 (9.52) Max .250 (6.35) Max .025 (.635) Anode Cathode 1 2 4 Emitter 3 Collector .350 (8.89) Max .025 (.635) Seating Plane .300 (7.62) Min .020 (.508) Square Typ .300 (7.62) .100 (2.54) |
Price & Availability of NTE3081
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