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| NTE69 Silicon NPN Transistor UHF/VHF Amplifier Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Operating Junction Temperature Tange, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise noted) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Colletor-Base Breakdown Voltage Emitter-Base Breakdown Voltage ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capaciatnce Collector-Base Time Constant fT Cobo rbCc VCE = 12V, IC = 4mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VCE = 12V, IE = 4mA, f = 31.8MHz 750 - - 1100 0.8 - - 1.0 9.5 MHz pF ps hFE VCE(sat) VBE(sat) VCE = 4V, IC = 4mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA 25 - - 60 200 750 - 350 950 mV mV V(BR)CEO IC = 1mA, IB = 0, Note 2 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 100A, IC = 0 25 35 3 - - - - - - V V V Symbol Test Conditions Min Typ Max Unit Note 2 Pulse test: Pulse Width 300s, Duty Cycle 2.0% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max BEC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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