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NTE929 Integrated Circuit General Purpose, High Current, NPN Transistor Array
Description: The NTE929 is a versatile array of five high-current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistors plus a separate terminal for the substrate permit maximum flexibility in circuit design. Features: D High IC 100mA max D Low VCEsat (at 50mA) 0.7V max. D Matched pair (Q1 and Q2) V10 (VBE matched): 5mV max. I10 (at 1mA): 2.5A max. D 5 independent transistors plus separate substrate connection. Applications: D Signal processing and switching systems operating from DC to VHF D Lamp and relay driver D Differential amplifier D Temperature-compensated amplifier D Thyristor firing Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation, PD Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Linearly 6.67mW/C Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec max), TL . . . . . . . . . . . +265C The following ratings apply for each transistor in the device: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (Pin5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter For Each Transistor Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Substrate Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO IC = 100A, IE = 0 V(BR)CEO IC = 1mA, IB = 0 V(BR)CIO ICEO ICBO DC Forward Current hFE VBE VCE(sat) fT VIO IIO ICI = 100A, IB = 0, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IE = 0 VCE = 3V, IC = 10mA VCE = 3V, IC = 50mA Base-Emitter Voltage Collector-Emitter Saturation Voltage Gain-Bandwidth Product Absolute Input Offset Voltage Absolute Input Offset Current VCE = 3V, IC = 10mA IC = 50mA, IB = 5mA VCE = 3V, IC = 10mA VCE = 3V, IC = 1mA VCE = 3V, IC = 1mA V(BR)EBO IE = 500A, IC = 0 20 15 20 5.0 - - 40 40 0.65 - - - - 60 24 60 6.9 - - 76 75 0.74 0.4 450 1.2 0.7 - - - - 10 1 - - 0.85 0.7 - 5.0 2.5 V V MHz mV A V V V V A A Symbol Test Conditions Min Typ Max Unit
Pin Connection Diagram
Collector Q1 1 Collector Q2 2 Base Q2 3 Emitter Q2 4 Substrate 5 Base Q3 6 Collector Q3 7 Emitter Q3 8 16 Base Q1 15 Emitter Q1 14 Collector Q5 13 Base Q5 12 Emitter Q5 11 Emitter Q4 10 Base Q4 9 Collector Q4
16
9
.260 (6.6) Max
1
8
.785 (19.9) Max .200 (5.08) Max .245 (6.22) Min .100 (2.54) .700 (17.7)
.300 (7.62)

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