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| NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector-Emitter Voltage: VCEO = 300V D DC Current Gain Specified at 1A and 2.5A D Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.8V @ 1A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Device Dissipation (TC = +75C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 75C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75C/W Electrical Characteristics: (TC = +75C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0 ICEO ICEX Emitter Cutoff Current ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product fT IC = 200mA, VCE = 10V, f = 1MHz 2.5 - - MHz hFE VCE(sat) VBE(sat) IC = 1A, VCE = 5V IC = 2.5A, VCE = 5V IC = 1A, IB = 0.1A IC = 1A, IB = 0.1A 30 10 - - - - - - 90 - 0.8 1.2 V V IEBO VCE = 300V, IB = 0 VCE = 300V, VEB(off) = 1.5V, TC = +125C VEB = 5V, IC = 0 300 - - - - - - - - 0.25 0.5 5 V mA mA mA Symbol Test Conditions Min Typ Max Unit .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE94
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