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| PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Flip chip and chip-on-board applications Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 47% poweradded efficiency - making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in tm Class 1 Bluetooth applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit corrects the turn-on/off switching of amplifier output with less than 3 dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423G operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 120 mA. Shipping Method Diced wafer Waffle pack The silicon/silicon-germanium structure of the PA2423G provides high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Features +22.5 dBm at 47% Power Added Efficiency Low current 80 mA typical @ Pout=+20 dBm Temperature stability better than 1dB Power-control and Power-down modes -40C to +85C temperature range Gold bump bare die (0.63mm x 0.96mm) Ordering Information Part PA2423G PA2423G-EV Package Gold bump bare die Evaluation kit Functional Block Diagram V CTL V CC0 V RAMP Bias Generator Ramp Circuitry IN Stage 1 Interstage Match Stage 2 OUT/ V CC2 GND V CC1 GND DOC # 05PDS003 Rev 5 07/26/2001 Page 1 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Pad Description For reference of pad numbers to the package drawings, see pages 4 and 5. Number 1 2 3 4 5 6 7 8 9 10 11 12 Name IN VRAMP GND1 VCTL GND2 GND3 OUT/VCC2 GND4 GND5 VCC1 GND6 VCC0 PA input PA enable/disable control input Ground Output power level control Ground Ground PA output and stage2 collector supply voltage Ground Ground Stage1 collector supply voltage Ground Ramp supply voltage Description Pad Coordinate, Center of Pad (lower left corner is (0.0)) X = 192m 10m, Y = 315m 10m X = 192m 10m, Y = 515m 10m X = 352m 10m, Y = 515m 10m X = 512m 10m, Y = 515m 10m X = 672m 10m, Y = 515m 10m X = 832m 10m, Y = 515m 10m X = 752m 10m, Y = 315m 10m X = 832m 10m, Y = 115m 10m X = 672m 10m, Y = 115m 10m X = 512m 10m, Y = 115m 10m X = 352m 10m, Y = 115m 10m X = 192m 10m, Y = 115m 10m Absolute Maximum Ratings Symbol VCC VCTL VRAMP IN TA TSTG Tj Supply Voltage Control Voltage Ramping Voltage RF Input Power Operating Temperature Range Storage Temperature Range Maximum Junction Temperature -40 -40 Parameter Min. -0.3 -0.3 -0.3 Max. +3.6 VCC VCC +8 +85 +150 +150 Unit V V V dBm C C C Operation in excess of any one of the above Absolute Maximum Ratings may result in permanent damage. This device is a high performance RF integrated circuit with EST rating < 600V and is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. DOC # 05PDS003 Rev 5 07/26/2001 Page 2 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information DC Electrical Characteristics Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25C, f = 2.45GHz, Input and Output externally matched to 50 ,unless otherwise noted. Symbol VCC ICC Note Supply Voltage 1 3 Parameter Min. 3.0 Typ. 3.3 120 25 Max. 3.6 150 Unit V mA % Supply Current (ICC = IVCC0 + IVCC1 + IVCC2 ) Supply Current variation over temperature, (-40C < TA <+85C) PA Output Power Control Voltage Range 0 ICCtemp VCTL ICTL VRAMP Istby VCC 200 250 V A V 1 3 3 1 Current sourced by VCTL Pin Logic High Voltage Logic Low Voltage Leakage Current when VRAMP = 0V 2.0 0.8 0.5 10 V A AC Electrical Characteristics Conditions: VCC0 =VCC1 =VCC2 =VRAMP =3.3V, VCTL =3.3V,PIN =+2 dBm, TA =25C, f = 2.45GHz, Input and Output externally matched to 50, unless otherwise noted Symbol Note Parameter Min . 240 0 20.0 Typ. Max. Unit fL-U POUT 3 1 1 3 3 Frequency Range Output Power @ PIN =+2 dBm,VCTL = 3.3V Output Power @ PIN =+2 dBm,VCTL =0.4V POUT variation over temperature (-40C MHz dBm dBm dB dBm/V % dB dBc dB dB PTEMP dP OUT /dVCTL PAE GVAR 2f, 3f, 4f, 5f IS21IOFF IS12 I STAB 3 3,4 2 2 2 Gain Variation over band (2400-2500 MHz) Harmonics Isolation in "OFF" State, PIN =+2dBm,VRAMP =0V Reverse Isolation Stability (PIN = +2dBm, Load VSWR = 6:1) 20 32 25 42 All non-harmonically related outputs less than -50 dBc Notes: (1) Guaranteed by production test at TA =25C. (2) Guaranteed by design only. (3) Guaranteed by design and characterization. (4) Harmonic levels are greatly affected by topology of external matching networks. (5) RF characteristics specified above are for direct die attach (Flip-chip) on SiGe Applications Board. For wire bonded applications there may be some degradation in performance due to effects of bond wires and interconnect. DOC # 05PDS003 Rev 5 07/26/2001 Page 3 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Gold Bump Bare Die - Top and Side Views The first drawing provides the top view of the gold bump bare die (gold bumps on top surface). This view should be used for the chip-on-board mounting. The second drawing illustrates the side view of the die. 960m 20 m 2 600m 3 600m 4 600m 5 600 m 6 1000 m 630m20m 1000m 4600m 1 45o 1000m 1000m 600m 600 m 7 1000m 600m 600 m 142m10m 12 (X=0,Y=0) 11 10 9 8 65m10m Gold 25m3m 300m5 m SILICON DOC # 05PDS003 Rev 5 07/26/2001 Page 4 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Gold Bump Bare Die - Bottom View This drawing shows the gold bump bare die when viewed from the bottom of the die (without gold bumps). This view and pintout orientation should be used for flip chip mounting - top surface of die (with gold bumps) is inverted to make contact with PCB. 960m 20m 12 600m 11 600m 10 600m 9 600 m 8 1000 m 1000m 4600m 1 45o 1000m 1000m 600m 600 m 600m 7 1000 m 600 m 142m10m 2 (X=0,Y=0) 3 4 5 6 65m10m DOC # 05PDS003 Rev 5 07/26/2001 Page 5 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Typical Performance Characteristics SiGe PA2423G-EV evaluation board, VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25C, f = 2.45GHz, Input and Output externally matched to 50, unless otherwise noted) Pout, Icc vs Supply Voltage 24 23 150 50 45 40 PAE vs Input Power 22 21 20 19 18 17 16 15 14 2.4 2.6 2.8 3 3.2 3.4 3.6 134 126 118 110 102 94 86 78 70 Supply current (mA) 142 Output Power (dBm) PAE (%) 35 30 25 20 15 10 5 0 -28 -24 -20 -16 -12 -8 -4 0 4 8 Input Power(dBm) Pout Icc Vcc(V) Supply Current vs Control Voltage Supply Current (mA) 140 120 100 80 60 40 20 0 0.4 0.9 1.4 1.9 2.4 2.9 3.4 Output Power vs Control Voltage 25 Output Power (dBm) 20 15 10 5 0 -5 -10 -15 -20 0.4 0.9 1.4 1.9 2.4 2.9 3.4 Vctl(V) Pin=-4dBm Pin=0dBm Pin +2dBm Vctl(V) Pin=-4dBm Pin=+2dBm Pin=0dBm DOC # 05PDS003 Rev 5 07/26/2001 Page 6 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Output Power, Gain vs Input Power Output Power (dBm) 25 30.00 Pout vs Frequency 24.0 23.0 22.0 21.0 20.0 19.0 18.0 2.2 2.3 2.4 2.5 2.6 2.7 15 20.00 10 15.00 5 10.00 0 -28 -24 -20 -16 -12 -8 -4 0 4 8 5.00 Input Power (dBm) Gain Pout Gain (dB) 20 25.00 Output Power (dBm) Frequency (GHz) Harmonic Output Spectrum Icc vs Frequency 30 20 10 0 140 130 120 110 100 90 80 70 60 2.3 2.3 2.4 2.4 2.5 2.5 2.6 2.6 2.7 Output Power (dBm) Supply Current (mA) -10 -20 -30 -40 -50 1 2 3 4 5 6 7 8 9 10 11 12 13 Frequency (GHz) Frequency (GHz) PA output spectrum with BT modulated signal 30 20 RF Output Power (dBm) into 50R 10 0 -10 -20 -30 -40 -50 -60 2.4475 2.4485 2.4495 2.4505 2.4515 2.4525 Frequency (GHz) DOC # 05PDS003 Rev 5 07/26/2001 Page 7 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Information For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423G. The order part number is PA2423G-EV. The evaluation board is intended to simplify the testing with respect to RF performance of this power amplifier. The application note, 05AN007 provides the supporting information for using the evaluation board. It contains information on the schematic, bill of materials and recommended layout for the power amplifier and the input and output matching networks. To assist in the design process, this layout is available, upon request, in gerber file format. Using VRAMP VRAMP is a digital pin used to power-up and power-down the PA2423G in Time Duplex systems such as Bluetoothtm 1.1. During receive mode, VRAMP voltage is pulled down, PA2423G acts as a 25 dB isolation block between the radio and the antenna while consuming a modest 1uA. In transmit mode, VRAMP voltage is pulled to VCC and PA2423G offers 19 dB to 21dB of large signal gain. The rise and fall time are in the order of 12usec. Using VCTL VCTL is an analog pin that is designed to control the gain of PA2423G. Applying a voltage between 0V and Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to PA2423G, the VCTL function can greatly optimize the PAE of the system at all four Bluetoothtm transmitted power levels. By applying approximately 1.4V to VCTL, for example, a Class1 radio can be modified to a Class2 radio with the PA2423G consuming only 15mA. By implementing a resistor DAC, the VCTL pin can interface with Bluetoothtm transceivers offering digital and programmable outputs. DOC # 05PDS003 Rev 5 07/26/2001 Page 8 PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com U.S.A. 19925 Stevens Creek Blvd. Suite 135 Cupertino, CA 95014-2358 Phone: +1 408 973 7835 Fax: +1 408 973 7235 United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: +44 1223 598 035 Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. The Bluetooth trademarks are owned by Bluetooth SIG Inc., USA. Copyright 2001 SiGe Semiconductor All Rights Reserved DOC # 05PDS003 Rev 5 07/26/2001 Page 9 |
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