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| MOSFET MODULE FEATURES * Dual MOS FETs Cascaded Circuit Dual 50A /500V OUTLINE DRAWING PDM505HA Dimension(mm) 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel * 300KHz High Speed Switching Possible Circuit TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 220g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR PDM505HA 500 +/ - 20 50 (Tc=25C) 35 (Tc=25C) 100 Tc=25C) 350 Tc=25C) -40 to +150 -40 to +125 2000 3.0 2.0 Unit V V A A W C C V N*m Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125C, VDS=VDSS,VGS=0V VDS=VGS, ID=3mA VGS=+/- 20V,VDS=0V VGS=10V, ID=25A VGS=10V, ID=25A VDS=15V, ID=25A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=25A VGS= -5V, +10V RG= 5 ohm Min. 2.0 - Typ. 3.1 110 3.2 30 8.4 1.1 0.24 92 110 250 68 Max. 1.0 4.0 4.0 0.3 120 3.4 - Unit mA V A m-ohm V S nF nF nF ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=50A IS=50A, -dis/dt=100A/s Min. - Typ. 80 0.18 Max. 35 100 1.5 - Unit A A V ns C Unit C/W THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f) Test Condition MOS FET Diode Mounting surface flat, smooth, and greased Min. - Typ. - Max. 0.36 2.0 0.1 PDM505HA 108.0 80 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 16 DRAIN CURRENT ID (A) 60 6 12 40 4 8 20 2 4 0 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 12 0 0 -40 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 160 12 16 5 10 CAPACITANCE C (nF) GATE TO SOURCE VOLTAGE VGS (V) 2 SWITCHING TIME t ( s) 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 600 12 8 1 6 8 0.5 4 0.2 4 2 0.1 0 0.05 0 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 100 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 200 1000 120 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 -5 10 500 SOURCE CURRENT IS (A) SWITCHING TIME t (ns) 100 200 200 80 100 100 60 50 50 40 20 20 10 20 10 1 2 5 10 20 DRAIN CURRENT ID (A) 50 100 0 1.8 5 0 100 200 300 400 -dis/dt (A/ s) 500 600 200 100 50 DRAIN CURRENT ID (A) 20 10 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 2 1 0.5 0.2 0.1 0.05 0.02 0.01 -5 10 2 1 0.5 0.2 1 2 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 |
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