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| Product Specification PE4263 DIE SP6T UltraCMOSTM 2.6 V Switch 100 - 3000 MHz Figure 1. Functional Diagram Features * Three pin CMOS logic control with * TX1 RX1 * * * * * TX2 RX2 RX3 CMOS Control/Driver and ESD RX4 integral decoder/driver Low TX insertion loss: 0.55 dB at 900 MHz, 0.65 dB at 1900 MHz TX - RX Isolation of 48 dB at 900 MHz, 40 dB at 1900 MHz Low harmonics: 2fo = -85 dBc and 3fo = -72 dBc 1500 V HBM ESD tolerance all ports 41 dBm P1dB No blocking capacitors required Product Description V1 V2 V3 Figure 2. Die Top View RX1 GND RX2 GND GND GND RX3 GND TX2 GND RX4 GND TX1 ANT The PE4263 SP6T RF UltraCMOSTM Switch addresses the specific design needs of the Quad-Band GSM Handset Antenna Switch Module Market. On-chip CMOS decode logic facilitates three-pin low voltage CMOS control. High ESD tolerance of 1500 V at all ports, no blocking capacitor requirements and on-chip SAW filter over-voltage protection devices make this the ultimate in integration and ruggedness. The PE4263 UltraCMOSTM RF Switch is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi(R)) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. GND VDD V3 GND V2 V1 GND Document No. 70-0175-02 www.psemi.com NDA required for full version: Contact sales@psemi.com (c)2005 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 4 PE4263 Product Specification Table 1. Electrical Specifications @ +25 C, VDD = 2.6 V (ZS = ZL = 50 ) Parameter Operational Frequency ANT - TX - 850 / 900 MHz Insertion Loss ANT - TX - 1800 / 1900 MHz ANT - RX - 850 / 900 MHz ANT - RX - 1800 / 1900 MHz TX - RX - 850 / 900 MHz TX - RX - 1800 / 1900 MHz Isolation TX - TX - 850 / 900 MHz TX - TX - 1800 / 1900 MHz ANT - TX - 850 / 900 MHz ANT - TX - 1800 / 1900 MHz Return Loss 850 / 900 MHz 1800 / 1900 MHz 35 dBm TX Input - 850 / 900 MHz 33 dBm TX Input - 1800 / 1900 MHz 35 dBm TX Input - 850 / 900 MHz 33 dBm TX Input - 1800 / 1900 MHz (10-90%) (90-10%) RF 0.55 0.65 0.90 1.00 48 40 29 25 31 25 22 23 -85 -81 -72 -66 2 Conditions Typical Units MHz dB dB dB dB dB dB dB dB dB dB dB 2nd Harmonic dBc 3rd Harmonic Switching Time dBc s Table 2. Pin Descriptions Pin No. 12 22 31 4 2 Pin Name ANT TX1 GND TX2 GND GND VDD V3 GND V2 V1 GND GND RX4 GND RX3 GND RX2 GND RX1 RF I/O - TX1 Description RF Common - Antenna Figure 3. Pin Configuration (Top View) ANT TX1 Ground (Requires two bond wires) RF I/O - TX2 Ground Ground Supply Switch control input, CMOS logic level Ground Switch control input, CMOS logic level Switch control input, CMOS logic level Ground Ground RF I/O - RX4 Ground RF I/O - RX3 Ground RF I/O - RX2 Ground RF I/O - RX1 6 7 2 51 6 1 1 20 19 RX1 GND RX2 GND RX3 GND RX4 GND 7 8 91 10 11 121 131 142 15 1 GND GND 3 18 17 TX2 GND 4 5 PE4263 Die 16 15 14 13 8 9 10 11 12 V3 V2 GND GND V1 162 171 18 2 191 20 2 Notes: 1. Bond wires should be physically short and connected to ground plane for best performance. 2. Blocking capacitors needed only when non-zero DC voltage present. (c)2005 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 4 Document No. 70-0175-02 UltraCMOSTM RFIC Solutions NDA required for full version: contact sales@psemi.com GND VDD PE4263 Product Specification Table 3. Absolute Maximum Ratings Symbol VDD VI TST TOP Parameter/Conditions Power supply voltage Voltage on any input Storage temperature range Operating temperature range TX input power (50 ) PIN RX input power (50 ) 1 1 Table 4. DC Electrical Specifications Max 4.0 VDD+ 0.3 Units V V C C Parameter VDD Supply Voltage IDD Power Supply Current (VDD = 2.6V) Control Voltage High Control Voltage Low 0.7 x VDD 0.3 x VDD Min 2.4 Typ 2.6 13 Max 2.8 20 Units V A V V Min -0.3 -0.3 -65 -40 +150 +85 +38 dBm +23 1500 100 2000 1700 V V V V Table 5. Truth Table Path ANT - RX1 ANT - RX2 ANT - RX3 ANT - RX4 ANT - TX1 ANT - TX2 V3 0 0 0 0 1 1 V2 0 0 1 1 0 1 V1 0 1 0 1 x x ESD Voltage (HBM, MIL_STD 883 Method 3015.7) ESD Voltage (MM, JEDEC, JESD22-A114-B) ESD Voltage (CDM, JEDEC, JESD22-C101-A) ESD Voltage at ANT Port (IEC 61000-4-2) Note: 1. Max RF specified with VDD applied VESD Electrostatic Discharge (ESD) Precautions When handling this UltraCMOSTM device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Absolute Maximum Ratings are those values listed in the above table. Exceeding these values may cause permanent device damage. Functional operation should be restricted to the limits in the DC Electrical Specifications table. Exposure to absolute maximum ratings for extended periods may affect device reliability. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOSTM devices are immune to latch-up. Table 6. Ordering Information Order Code 4263-92 4263-98 4263-10 Die ID C9797_3 C9797_3 C9797_3 Description PE4263-DIE-D PE4263-DIE-400G PE4263-DIE-1H Package Film Frame Waffle Pack Evaluation Kit Shipping Method Wafer (Gross Die / Wafer Quantity) 400 Dice / Waffle Pack 1/ box Document No. 70-0175-02 www.psemi.com NDA required for full version: contact sales@psemi.com (c)2005 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 4 PE4263 Product Specification Sales Offices The Americas Peregrine Semiconductor Corp. 9450 Carroll Park Drive San Diego, CA 92121 Tel 858-731-9400 Fax 858-731-9499 North Asia Pacific Peregrine Semiconductor K.K. 5A-5, 5F Imperial Tower 1-1-1 Uchisaiwaicho, Chiyoda-ku Tokyo 100-0011 Japan Tel: +81-3-3502-5211 Fax: +81-3-3502-5213 Europe Peregrine Semiconductor Europe Commercial Products: Batiment Maine 13-15 rue des Quatre Vents F- 92380 Garches, France Tel: +33-1-47-41-91-73 Fax : +33-1-47-41-91-73 Space and Defense Products: 180 Rue Jean de Guiramand 13852 Aix-En-Provence cedex 3, France Tel: +33(0) 4 4239 3361 Fax: +33(0) 4 4239 7227 South Asia Pacific Peregrine Semiconductor 28G, Times Square, No. 500 Zhangyang Road, Shanghai, 200122, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652 For a list of representatives in your area, please refer to our Web site at: www.psemi.com Data Sheet Identification Advance Information The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS is a trademark of Peregrine Semiconductor Corp. Preliminary Specification The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a DCN (Document Change Notice). (c)2005 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 4 Document No. 70-0175-02 UltraCMOSTM RFIC Solutions NDA required for full version: contact sales@psemi.com |
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