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| PJA733 PNP Epitaxial Silicon Transistor AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OS C. * Complement to PJC945 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic PC Tj Tstg Rating -50 -45 -5 -100 450 150 -55 ~150 Unit V V V mA mW C C Device PJA733CT PJA733CX Operating Temperature -20+85 Package TO-92 SOT-23 P in : 1. Base 2. Emitter 3.Collector P in : 1. Emitter 2. Colletor 3. Base ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (Ta = 25 C) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current-Gain-Bandwidth Product Output Capacitance Noise Figure Symbol BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE VCE (SAT) VBE (SAT) VBE (on) fT C Ob NF Test Condition Ic = -100A, IE = 0 Ic =-1.0mA, IB =0 IE = _100A, IC = 0 VCB= 45V,IE =0 VEB=3V,IC=0 VCE =40V,IB=0 VCE =6V,Ic =1.0 mA IC=-100mA,IB=-5mA IC=-100mA,IB=-5mA IC=-2mA,VCE =-5V VCE =-5V,IC=-10mA f=1MHZ VCB=-10V,IE =0 VCE =-5V,IC= _0.2mA f=1KHZ ,Rs=1K Min -50 -40 -5 Typ Max Unit V V V nA nA -50 -50 70 200 -0.2 -0.82 -0.65 190 4.5 0.7 700 -0.7 -1.0 -0.75 7.0 10 -0.6 100 V V V MHz pF dB h FE (2) CLASSIFICATION R 70-140 Q 120-240 P 200-400 K 350-700 Classification hFE 1-3 2002/01.rev.A PJA733 PNP Epitaxial Silicon Transistor STATIC CHARACTERISTIC BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJA733 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A |
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