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| PN4356 Discrete POWER & Signal Technologies PN4356 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 5.0 1.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4356 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN4356 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 10 mA, I B = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 75 C VEB = 5.0 V, IC = 0 VEB = 4.0 V, IC = 0 80 80 5.0 50 5.0 10 100 V V V nA A A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 100 A VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 100 mA VCE = 10 V, IC = 500 mA I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA 25 40 50 40 30 250 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.15 0.50 0.90 1.10 V V V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe NF Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure VCB = 10 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz I C = 50 mA, VCE = 10 V, f = 100 MHz VCE = 10 V, IC = 100 A, RS = 1.0 k, f = 1.0 kHz, BW = 1.0 Hz 1.0 30 110 5.0 3.0 dB pF pF SWITCHING CHARACTERISTICS ton toff Turn-on Time Turn-off Time VCC = 30 V, IC = 500 mA, I B1 = IB2 = 50 mA 100 400 ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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