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PTF 10015 50 Watts, 300-960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.
Features
* Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% lot traceability Available in Package 20222 as PTF 10031
* * * * * *
Typical Power Out & Efficiency vs. Power In
70 60 90 80 70 Efficiency (%) 40 30 20 10 0 0 1 2 3 4 60 50
A-1 234 569 914
50
VDD = 28 V IDQ = 380 mA f = 960 MHz
40 30 20
Drain Efficiency
Output Power
Output Pow er (W)
100 15
Package 20235
A-12
1003 1
3456 9743
Package 20222
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TC = 70C) All published data is at TC = 25C unless otherwise indicated. TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 175 1.0 -65 to +150 1.0
Unit
Vdc Vdc C Watts W/C C C/W
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1
PTF 10015
Electrical Characteristics
Characteristic
(100% Tested)
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Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 2.0
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 380 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min
12.0 50 50 --
Typ
13.0 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Gain vs. Power Output
16 15
-25
Intermodulation Distortion vs. Power Output
-15
VDD = 28 V IDQ = 380 mA f1 = 950.000 MHz f2 = 950.100 MHz
5th -45 7th 3rd
Gain (dB)
13 12 11 10 0 10 20 30 40 50 60 70
IMD (dB)
14
-35
VDD = 28 V IDQ = 380 mA f = 960 MHz
-55 0 10 20 30 40 50 60 70
Power Output (Watts)
Output Power (Watts PEP)
2
e
Output Power vs. Supply Voltage
60
PTF 10015
Broadband Gain vs. Frequency
15
Output Power (Watts)
55
14
Gain (dB)
50
13
VDD = 28 V
12
45
IDQ = 380 mA f = 960 MHz
IDQ = 380 mA POUT = 50 W
930 935 940 945 950 955 960
40 22 24 26 28 30 32 34
11 925
Drain-Source Voltage (Volts)
Frequency (MHz)
Capacitance vs. Supply Voltage
160 140 18
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130
0.43 1.25 2.08 2.9 3.71 4.53
Cds & Cgs (pF)
120 100 80 60 40 20 0 0 10
Cgs
VGS = 0 V f = 1 MHz
16 14 12 10
Voltage normalized to 1.0 V Series show current (A)
Cds Crss
20 30 40
8 6 4 2
Supply Voltage (Volts)
Impedance Data (circuit optimized at 960 MHz)
VDD = 28 V, POUT = 50 W, IDQ = 380 mA
D
Crss (pF)
Z0 = 50 W
Z Source
Z Load
G S
Frequency
MHz 850 900 950 1000 R
Z Source W
jX -1.22 -0.44 +0.67 +1.30 R 1.38 1.20 1.08 0.96
Z Load W
jX 1.00 1.65 2.33 2.90 3 2.50 2.45 2.40 2.40
PTF 10015
Typical Scattering Parameters
(VDS = 28 V, ID = 1.0 A)
e
S11 S21 Ang
-153 -160 -163 -164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -177 -178 -179 180 179 179 179 179 179
f (MHz)
40 60 80 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S12 Ang
93 85 80 76 65 58 51 45 41 36 33 30 27 26 22 21 19 16 14 12 14 8 3 6 1 4 -5 -5 -5 -3 5 -8
S22 Ang
3 1 -6 -13 -18 -23 -31 -31 -28 -33 -36 -52 -46 -53 -27 -18 -13 14 -1 30 53 59 56 69 57 65 56 61 52 59 58 62
Mag
0.883 0.878 0.876 0.884 0.904 0.915 0.934 0.947 0.962 0.975 0.974 0.977 0.979 0.985 0.981 0.980 0.975 0.973 0.972 0.969 0.966 0.969 0.969 0.970 0.970 0.970 0.971 0.971 0.973 0.973 0.972 0.965
Mag
33.0 21.8 16.1 12.8 8.21 5.67 4.36 3.41 2.78 2.30 1.90 1.65 1.44 1.28 1.14 1.01 0.924 0.809 0.749 0.656 0.609 0.564 0.526 0.450 0.405 0.383 0.351 0.330 0.308 0.255 0.219 0.210
Mag
0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.010 0.008 0.008 0.006 0.006 0.005 0.004 0.003 0.004 0.003 0.001 0.003 0.003 0.002 0.003 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006
Mag
0.527 0.533 0.553 0.574 0.638 0.694 0.769 0.792 0.837 0.873 0.874 0.912 0.916 0.925 0.933 0.933 0.936 0.946 0.939 0.946 0.948 0.945 0.949 0.955 0.953 0.952 0.959 0.957 0.963 0.965 0.965 0.957
Ang
-143 -148 -150 -148 -148 -149 -148 -149 -150 -151 -151 -152 -154 -154 -156 -157 -158 -160 -160 -162 -164 -164 -167 -167 -168 -169 -170 -170 -171 -171 -171 -172
4
e
Test Circuit
PTF 10015
Test Circuit Schematic for f = 960 MHz
DUT
l1 l2 l3 l4 l5 l6
C1, C5 C2, C4, C6, C9 C3 C7 C8 L1 R1, R2, R3 Circuit Board
PTF 10015 .140 l 960 MHz Microstrip 50 W .270 l 960 MHz Microstrip 50 W .185 l 960 MHz Microstrip 6.2 W .225 l 960 MHz Microstrip 11.0 W .040 l 960 MHz Microstrip 50 W .330 l 960 MHz Microstrip 50 W 0.3-3.5 pF, Variable Capacitor, Johanson 36 pF, Capacitor ATC 100 B 0.01 mF, Capacitor ATC 10,000 B 0.1 mF, 50 V, Capacitor Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120" I.D. 220 W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Placement Diagram (not to scale)
5
PTF 10015
Test Circuit
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Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTF 10015 Uen Rev. A 04-01-99
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