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CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 81 CGY 81 Q627002G0078 MW 16 Maximum Ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation Total power dissipation (Ts 80 C) Ts: Temperature at soldering point Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 11 Unit K/W Symbol VD max. Value 9 4 150 -55...+150 tbd Tbd Unit V A C C W W ID TCh Tstg PPulse Ptot RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Functional Block Diagram: Vneg Vcon VD1 Control Circuit RF OUT RF IN Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name VD Cell n. c. RF IN Cell RF IN n. c. Vneg Vcon n. c. n. c. n. c. n. c. RF out RF out RF out RF out n. c. n. c. RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage Negative voltage Control voltage Configuration Drain voltage preamplifier stage Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Electrical Characteristics (TA = 25C , ZS=ZL=50 Ohm, VD=3.5V, Idq=300mA, unless otherwise specified ) Characteristics Frequency range Duty cycle AMPS output power TDMA output power AMPS gain at max. output TDMA gain at max. output CDMA output power CDMA gain at max. output Power ramping characteristic Full output power Pinch off Adjacent Channel Power CDMA 900kHz offset 1.98 MHz offset Adjacent channel power TDMA adjacent alternate 2nd alternate AMPS efficiency TDMA DC to RF efficiency @Padj=-26dBc at max. output CDMA DC to RF efficiency @Padj=-42dBc at max. output at Pout=10 dBm ( Iq set to 100mA ) Receive band noise power density ( 869 to 894 MHz ) Drain supply voltage range Negative supply voltage range Standby current @Vcon=0V Quiescent current Current consumption at VContr Current consumption at VNEG Operating temperature range Siemens Aktiengesellschaft Semiconductor Group Symbol min 824 typ max 849 100 Unit MHz % dBm dBm dB dB dBm dB V f tON/tOFF P P G G P G Vcontr 31,5 30 24 27 28 28 2.5 0.5 Padj/Pmain -45 -54 Padj/Pmain -28 -45 -45 55 dBc @ 30kHz dBc @ 30kHz PAE PAE % % 40 PAE 35 8 PRX VD Vneg Ipwr dwn IQ IControl INEG 3 3 % -137 2.7 -5.0 500 300 2 2 -30 +85 3.5 4.0 -7 dBm/Hz V V A mA mA mA C 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Power on sequence: 1. connect negative voltage to PA 2. connect control voltage to PA 3. turn on Vd 4. turn on Pin To switch off the device please use reverse sequence. Application Circuit: Vd C2 100p L3 RFin 3p9 C1 33 nH IC1 1 2 3 4 5 6 7 8 VD1 NC2 RFin NC4 Vneg Vcon NC7 NC8 NC16 NC15 VD2/RFout4 VD2/RFout3 VD2/RFout2 VD2/RFout1 NC10 NC9 8n2 C12 5p6 HQ GND (backside MW16) Vcon C11 10n 10n CGY81 C16 17 Vaux C14 33n 10 uH 3k9 R1 L1 33n C15 3 1 BAS 40-04 2 V1 C13 CLK 1n0 V2 1n0 BC848B Evaluation Board Parts List Part Type Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Position C1 C2, C7, C10 C3, C4, C5, C6 C8 C9 C11, C12 C13, C15 Description 3.9pF 0402 100pF 0402 1uF 1206 5.6pF 0603 HQ 10pF 0603 HQ 10 nF 0402 1 nF 0402 4 4 680R R2 Manufacturer Siemens Siemens Siemens AVX AVX Siemens Siemens 10p HQ 16 15 14 13 12 11 10 9 L2 100p 1u0 1u0 1u0 1u0 C3 C5 C4 C6 C7 C10 RFout C8 C9 100p Part Number 06035J5R6GBT 06035J100GBT Siemens Aktiengesellschaft Semiconductor Group 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Part Type Capacitor Inductor Inductor Inductor Resistor Resistor Diode Transistor Substrate Position C14, C16 L1 L2 L3 R1 R2 V1 V2 Description 33nF 0402 10uH 33nH Air Coil 8.2nH 0603 3.9k 0402 680 Ohm 0402 BAS40-04W BC848B FR4, h=0.2mm, r=4.5 Manufacturer Siemens Siemens H. David GmbH Part Number PN/BV 1250 Siemens Siemens Siemens Evaluation Board: Vd CGY 81 Cell Band PA SIEMENS L2 RFin RFin RFout V2 V1 Vaux CLK Vcon CLK Siemens Aktiengesellschaft Semiconductor Group 5 5 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo RFout CGY 81 Typical Performance in AMPS Operation Mode AMPS Mode: TG & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C AMPS Mode: PAE & Pout vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 900 750 60 50 40 TG [dB] 30 20 10 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm] TG [dB] Id [mA] 35 30 Pout [dBm] 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm] 70.00 60.00 50.00 40.00 30.00 Pout [dBm] 20.00 PAE [%] 10.00 0.00 PAE [%] 850 600 450 300 150 0 Id [mA] AMPS Mode: Pout vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C AMPS Mode: PAE vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C 34 58 33 Pout [dBm] 56 32 PAE [%] 54 31 52 3 3.2 3.4 Vd [V] 3.6 3.8 4 3 3.2 3.4 Vd [V] 3.6 3.8 4 30 AMPS Mode: Pout vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C 33 32.8 32.6 32.4 32.2 32 31.8 31.6 31.4 31.2 31 820 58 57 56 PAE [%] 55 54 53 52 820 AMPS Mode: PAE vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C Pout [dBm] 825 830 835 f [MHz] 840 845 850 825 830 835 f [MHz] 840 845 Siemens Aktiengesellschaft Semiconductor Group 6 6 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Typical Performance in CDMA Operation Mode: CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 Pin [dBm] Pout [dBm] PAE [%] Id [mA] 800 700 600 Id [mA] 500 400 300 200 100 0 ACPR [dBc] 70 60 50 40 30 20 10 0 14 16 18 20 22 Pout [dBm] 24 26 28 30 ACP885 [dBc] ACP1,98 [dBc] TG [dB] 30 29 28 27 26 25 24 23 TG [dB] 850 CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 CDMA Mode: Gain vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA CDMA Mode: PAE vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 7 7 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 CDMA Mode: Gain vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA CDMA Mode: PAE vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 CDMA Mode: ACPR @885kHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 8 8 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 CDMA Mode: Gain vs. f Vd=4V, Pout=29,5dBm, Iq=300mA CDMA Mode: PAE vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Typical Performance in TDMA Operation Mode TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C 45 40 Pout [dBm], PAE [%] 35 30 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 Pin [dBm] Pout [dBm] PAE [%] Id [mA] 900 800 700 ACPR [dBc] 600 500 400 300 200 100 0 Id [mA] 80 70 60 50 40 30 20 10 0 14 16 18 20 22 24 26 28 30 Pout [dBm] Padj [dBc] Palt [dBc] TG [dB] 30 29 28 TG [dB] 850 27 26 25 24 23 22 TDMA Mode: Padj vs. f Vd=3,0V, Pout=29dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=3,0V, Pout=29dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 825 830 835 f [MHz] 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 Siemens Aktiengesellschaft Semiconductor Group 9 9 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 TDMA Mode: Gain vs. f Vd=3V, Pout=29dBm, Iq=300mA TDMA Mode: PAE vs. f Vd=3V, Pout=29dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 TDMA Mode: Padj vs. f Vd=3,5V, Pout=30dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 825 830 835 f [MHz] 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 TDMA Mode: Gain vs. f Vd=3,5V, Pout=30dBm, Iq=300mA TDMA Mode: PAE vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 10 10 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 TDMA Mode: Padj vs. f Vd=4V, Pout=31dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=4V, Pout=31dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 825 830 835 f [MHz] 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 ACPR [dBc] ACPR [dBc] 825 830 835 f [MHz] 840 845 850 TDMA Mode: Gain vs. f Vd=4V, Pout=31dBm, Iq=300mA TDMA Mode: PAE vs. f Vd=4V, Pout=31dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 825 830 835 f [MHz] 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 PAE [%] TG [dB] 825 830 835 f [MHz] 840 845 850 Siemens Aktiengesellschaft Semiconductor Group 11 11 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 12 12 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo |
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