![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
BA 586 Silicon PIN Diode Preliminary Data q q q BA 586 Current-controlled RF resistor for switching and attenuating applications. Frequency range above 1 MHz Designed for low IM distortion Type BA 586 Marking white P Ordering Code (tape and reel) Q62702-A930 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR IF Top Tstg Values 50 50 - 55 ... + 150 Unit V mA - 55 ... + 125 C 450 K/W 1) For detailed information see chapter Package Outlines. BA 586 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 50 V Diode capacitance f = 1 MHz, VR = 50 V f= 100 MHz, VR = 0 V Forward resistance f = 100 MHz IF = 10 A IF = 1 mA IF = 10 mA Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Symbol min. VF IR CT - - rf - - 6.5 gp LS - - 2400 58 7.8 40 2 - - 10 - - S Values typ. - - max. 1.15 50 - - Unit V nA pF 0.23 0.2 0.35 - nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz |
Price & Availability of Q62702-A930
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |