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| BFQ 81 NPN Silicon RF Transistor * For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFQ 81 RAs Q62702-F1049 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 16 25 25 2 30 4 mW 280 150 - 65 ... + 150 - 65 ... + 150 325 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 59 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFQ 81 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 16 120 - V A 100 nA 100 A 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFQ 81 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4.5 5.8 0.39 0.19 0.9 - GHz pF 0.6 dB 1.45 2.2 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 13 7.5 16 10.5 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFQ 81 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 17.03 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 35 1.0668 2.3785 1.2237 1.5489 33.977 21.842 14.701 0.26339 1.2554 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 110 0.22241 25.974 5.7058 1.1731 0.4318 0.26781 0 0.24448 0 0 0.74346 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80846 5.8728 0.36321 169.77 0.11894 0.3715 1.7707 0.48042 693.81 0.1254 0.75 1.11 300 fA fA mA V fF V eV K 0.011566 A All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFQ 81 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW 260 Ptot 240 220 200 180 160 140 120 100 80 60 40 20 0 0 TS TA 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-12-1996 BFQ 81 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.9 pF 7 GHz Ccb 0.7 0.6 0.5 0.4 0.3 fT 5 5V 2V 4 3 1V 2 0.2 0.1 0.0 0 4 8 12 16 V VR 22 1 0 0 5 10 15 20 25 0.7V mA IC 35 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 dB 10V 5V 3V 2V 12 10 8 6 1V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 10V dB 5V 3V 8 2V G 14 G 6 4 1V 2 4 0.7V 0 2 0 0 5 10 15 20 25 mA IC 35 -2 0 0.7V 5 10 15 20 25 mA IC 35 Semiconductor Group 6 Dec-12-1996 BFQ 81 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 18 VCE = Parameter, f = 900MHz 28 IC=15mA dB 0.9GHz dBm 8V G 14 0.9GHz 12 1.8GHz 10 8 6 4 1.8GHz IP3 24 22 20 18 16 14 12 10 1V 2V 3V 5V 2 0 0 2 4 6 8 V 12 8 6 0 4 8 12 16 20 24 28 mA 34 IC V CE Power Gain Gma, Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) VCE = Parameter 28 IC=15mA dB dB 24 IC=15mA G 25 G 22 20 18 20 16 14 15 12 10 10 10V 5 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 8 6 4 2 0 0.0 10V 2V 1V 0.7V GHz 3.5 f 0 0.0 0.5 1.0 1.5 2.0 2.5 Semiconductor Group 7 Dec-12-1996 |
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