 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BPX 79 Silizium-Fotoelement mit erhohter Blauempfindlichkeit Silicon Photovoltaic Cell with Enhanced Blue Sensitivity BPX 79 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht uberzogen q Weiter Temperaturbereich Anwendungen q fur Me-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Features q Especially suitable for applications from 350 nm to 1100 nm q Cathode = back contact q Coated with a humidity-proof protective layer q Wide temperature range Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the Licht- und nahen Infrarotbereich visible light and near infrared range Typ Type BPX 79 Bestellnummer Ordering Code Q62702-P51 Semiconductor Group 179 10.95 fso06631 BPX 79 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value - 55 ... + 100 1 Einheit Unit C V Top; Tstg VR Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 0 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessungen der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 1 V; E = 0 Dark current Spektrale Fotoempfindlichkeit, = 400 nm Spectral sensitivity Quantenausbeute, = 400 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom Short-circuit current Ee = 0.5 mW/cm2, = 400 nm Symbol Symbol Wert Value 170 800 350 ... 1100 Einheit Unit nA/Ix nm nm S S max A LxB LxW 20 4.47 x 4.47 mm2 mm 60 0.3 ( 50) 0.19 0.60 450 19 ( 14) Grad deg. A A/W Electrons Photon mV A IR S VO ISC Semiconductor Group 180 BPX 79 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 1 V; = 850 nm; Ip = 150 A Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Kapazitat, VR = 10 V, f = 1 MHz, Ev = 0 Ix Capacitance Symbol Symbol Wert Value 6 Einheit Unit s tr, tf TCV TCI C0 - 2.6 0.2 2500 mV/K %/K pF Semiconductor Group 181 BPX 79 Relative spectral sensitivity Srel = f () Open-circuit voltage VO = f (Ev ) Short-circuit current ISC = f (Ev ) Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 1 V, E = 0 Total power dissipation Ptot = f (TA) Directional characteristics Srel = f () Semiconductor Group 182 |
Price & Availability of Q62702-P51
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |