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CGY 96
GaAs MMIC
l l l l l l
Power amplifier for GSM class 4 phones 3.2 W (35dBm) output power at 3.5 V Overall power added efficiency 50 % Fully integrated 3 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package
CGY 96
CGY 96
Q62702G63
MW 16
Maximum ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Ts 80 C) Symbol VD max. Value 9 4 150 -55...+150 tbd tbd Unit V A C C W W
ID TCh Tstg PPulse Ptot
Ts: Temperature at soldering point
Thermal Resistance Characteristics Channel-soldering point Symbol max. Value tbd Unit K/W
RthChS
Siemens Aktiengesellschaft Semiconductor Group
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23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
Functional block diagramm:
VD1(1) VD2(2)
Vcontrol(8)
CGY96
Vneg(13)
current control circuit
RFin(16)
VD3/RFout(4,5,6)
GND1(14,15)
GND2(17)
Pin # 1 2 3 4,5,6 7 8 9,10,11, 12 13 14,15 16 (17)
Name VD1 VD2 n.c. VD3 / RFout n.c.
Configuration Drain voltage 1st stage Drain voltage 2nd stage Drain 3rd stage and RF-output -
Vcontrol Control voltage for power ramping n.c. Vneg Gnd1 RFin GND2 negative voltage for current control circuit Ground pin 1st stage RF Input Ground (backside of MW16 package)
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23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
Electrical characteristics (TA = 25C, Vneg=-5V, Vcontrol=2.2V; duty cycle 12.5%, ton=577sec) Characteristics Frequency range Supply current Pin=0dBm Supply current neg. voltage gener. Vaux=3.5V Gain (small signal) Power gain Pin=0dBm Output Power Pin=0dBm, Vcontrol=2.0V.....2.5V) Overall Power added Efficiency Pin=0dBm Dynamic range output power Vcontrol = 0.2...2.2V Harmonics Pin=0dBm Noise Power in RX (935-960MHz) Pin=0dBm, Pout=35dBm, 100kHz RBW Stability all spurious outputs < -60dBc, VSWR load, all phase angles Input VSWR Symbol f ID min 880 typ 1.8 10 40 35 35 50 80 -40 -43 -44 -81 max 915 Unit MHz A mA dB dB dBm % dB dBc dBc dBc dBm
IAUX G GP POUT
H(2f0) H(3f0) H(4f0) NRX
-
-
10 : 1 1.7 : 1
-
-
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CGY 96
Output Power and PAE vs. Input Power (Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577s)
38 37 36 35 34 33
75 70 65 60 55 50 45 40
Po ut [d B m]
32 31 30 29 28 27 26 25 24 23 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 Pout [dBm] PAE [%]
PA E 35 [% 30 ]
25 20 15 10 5 0
Pin [dBm]
Output Power and PAE vs. Control Voltage: (Vd=3.5V, Pin=0dBm, f=900MHz, duty cycle 12.5%, ton=577s)
40 30 20 10
100 90 80 70 60 50 40 30 20 10 0
Pout [dBm]
-10 -20 -30 -40 -50 -60 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3
Pout [dBm] PAE [%]
Vcontrol [V]
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PAE [%]
0
23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
Power Gain and Input Return Loss vs. Frequency (Vd=3.5V, Vcontrol=2.2V, Pin=5dBm, duty cycle 12.5%, ton=577s)
35,0 34,0 33,0 Powergain [dB] 32,0 31,0 30,0 29,0 28,0 27,0 26,0 25,0 0,880 0,885 0,890 0,895 0,900 0,905 0,910 0,915
Freq [GHz]
-10,0 -10,5 -11,0 Input Return Loss [dB] -11,5 -12,0 -12,5 -13,0 -13,5 -14,0 -14,5 -15,0 0,880 0,885 0,890 0,895 0,900 0,905 0,910 0,915
Freq [GHz]
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23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
Output Power vs. Drain Voltage (matched for VD=3.5V, Vcontrol=2.2V, Pin=0dBm, duty cycle 12.5%, ton=577s)
40 39 38 37 Pot [dBm] 36 35 34 33 32 31 30 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,2
VD [V]
Output Power at different Temperatures (Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577s)
36,0 35,5 35,0 34,5 34,0 33,5 33,0
-20C +20C +70C
Pout [dBm]
32,5 32,0 31,5 31,0 30,5 30,0 29,5 29,0 28,5 28,0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
Pin [dBm]
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23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
PAE at different Temperatures (Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577s)
55 50
-20C
45 40 35
+20C +70C
PAE [%]
30 25 20 15 10 5 0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
Pin [dBm]
Siemens Aktiengesellschaft Semiconductor Group
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23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
CGY 96 Evaluation Board
R11 R12 C11
C14
Vaux
T1 C12 L11
CLK
C13
D1
C G Y96
C3
C4
L3
L1 L2 C1 R1
C2 C5
(Size 34mm x 27mm)
Connections:
* * * *
Vd Vaux Vcontrol CLK
2.7 to 6VDC, pulsed (GSM: 12,5% duty cycle, ton=0.577ms) 2.7 to 6VDC 0.2 to 2.2 VDC (0.2V: min Pout, 2.2V: max Pout) 5 MHz to 15 MHz (with a 10uH inductor) or 150 kHz to 250 kHz (with a 100uH inductor instaed of the 10uH) (rectangular signal, 50% duty, 0 Volt to Vd voltage level)
Power on sequence:
1. continuous clock (CLK) on 2. turn on Vaux ==> check negative voltage at pin#13 (-5......-10V) 3. turn on Vcontrol (may be at the same time as 2) turn on Drainvoltage Vd turn on Input Power
Operation without using the negative voltage generator:
Operation without using the on board negative voltage generator is possible. In that case apply -5....-8 V directly at pin#13 (Vneg-Pin). The decvices in front of pin 13 are not necessary in that case.
Siemens Aktiengesellschaft Semiconductor Group 8 8 23.07.1998 1998-11-01 HL HF PE GaAs
Vcon
CGY 96
Vaux
C14 R11 L11
(Vneg)
D1.2 D1.1 C13
C12
CLK
C11 R12
T1
Vcontrol Vd
Vcon
C5 L3
RFout
CGY96
Vneg GND1
RFout RFout
C3
C4
RF OUT
RF IN
GND1 RFin
VD2 VD1
C2 L1 R1 C1 L2
Part List: CGY96 L1 L2 L3 C1 C2 C3 C4 C5 R1 33nH 33nH 33nH* 1nF 12pF 10pF** 2.2pF** 1nF 3.3Ohm Negative Voltage Generator D1 BAS40-04W T1 BC848B L11 10uH C11 1nF C12 1nF C13 47nF C14 1nF R11 3.8kOhm 680Ohm R12
* 33nH SMD-Inductor for drain3: Part Number BV1250 distribution by Horst David GmbH, 85375 Neufarn, Germany Phone-No ..8165/9548-0 , Fax-No ..8165/9548-28 ** for maximum efficiency use high quality capacitors for the output matching: Part Number ACCU-P0603 distribution by AVX GmbH, 85757 Karlsfeld, Germany Phone-No ..8131/9004-0
Siemens Aktiengesellschaft Semiconductor Group 9 9 23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
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23.07.1998 1998-11-01 HL HF PE GaAs

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