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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
TYPE NAME
0.8 MIN 2.5+/-0.1
OUTLINE DRAWING
1.5+/-0.1
FEATURES
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS 30 +/-10 3.1 20 200 150 -40 to +125 40 UNIT V V W mW mA
C C C/W
Note : Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS Vth Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=5mW, f=175MHz,Idq=50mA MIN 1 0.5 50 LIMITS TYP MAX. 25 1 2 3 0.8 60 UNIT uA uA V W %
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HVS1
MITSUBISHI ELECTRIC 1/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
Vgs-Ids CHARACTERISTICS 1.0 0.8 0.6 0.4 0.2
Ta=+25C Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
4 CHANNEL DISSIPATION Pch(W) 3 2 1
On PCB(*1)
0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
On PCB(*1) with Heat-sink
0.0 0 1 2 3 Vgs(V) 4 5
Vds-Ids CHARACTERISTICS 1.5
Ta=+25C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V
Vds VS. Ciss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0
Ta=+25C f=1MHz
0.5
Vgs=4V Vgs=3V
0 0 2 4 6 Vds(V) 8 10
Ciss(pF)
1 Ids(A)
5
10 Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 4
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS
Ta=+25C f=1MHz
3 Crss(pF)
Coss(pF)
2
1
0 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20
RD00HVS1
MITSUBISHI ELECTRIC 2/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
Pin-Po CHARACTERISTICS
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -15 -10 -5 0 5 Pin(dBm) 10 15
Gp Po
100 90 Pout(W) , Idd(A) 80 d(%) 70 60
Ta=+25C f=175MHz Vdd=12.5V Idq=50mA
1.2
Po
120 100
d
1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 Pin(mW) 15 20
Idd Ta=25C f=175MHz Vdd=12.5V Idq=50mA
80 60 40 20 0 d(%) Idd(mA)
10 Jan 2006
50 40 30
Pin-Po CHARACTERISTICS 35 30 Po(dBm) , Gp(dB) , Idd(A) 25 20 15 10 5 0 -15 -10 -5 0 5 Pin(dBm) 10 15
Ta=+25C f=520MHz Vdd=12.5V Idq=50mA Gp Po
Pin-Po CHARACTERISTICS 100 90 Pout(W) , Idd(A) 80 d(%) 70 60 50 40 30 1.4 1.2 1.0 0.8 0.6 0.4
Idd d Po
140 120
Ta=25C f=520MHz Vdd=12.5V Idq=50mA
100 80 60 40 20 0 d(%)
0.2 0.0 0 5 10 Pin(mW) 15 20
Vdd-Po CHARACTERISTICS 1.4 1.2 1 Po(W) 0.8
Idd Ta=25C f=175MHz Pin=5mW Idq=50mA Zg=ZI=50 ohm Po
Vdd-Po CHARACTERISTICS 280 240 200 Po(W) 160 120 80 40 0 Idd(mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=15mW Idq=50mA Zg=ZI=50 ohm Po
320 280 240 200
Idd
0.6 0.4 0.2 0 4 6 8 10 Vdd(V) 12 14
160 120 80 40 0
RD00HVS1
MITSUBISHI ELECTRIC 3/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TEST CIRCUIT(f=175MHz)
Vgg
V dd
C1 18.0m m 18.0m m
C2
10uF,50V
4.7kO HM 4m m RF-in 2m m 19.5m m L1 10pF 18pF 10.5m m 4.5m m L2 270O HM 240pF L1: Enam eled wire 4Turns,D:0.43m m ,2.46m m O .D L2:LQ G 11A68N(68nH,m urata) L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D L4: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D C 1,C2:1000pF,0.022uF in parallel 4m m
RD 00HV S1 5m m
L4 4m m 6.5m m 20.5m m L3 3pF
15m m
4.0m m
180pF
250pF R F-out
18pF
Note:Board m aterial-glass epoxi substrate Micro strip line width=1.0m m /50 O HM,er:4.8,t=0.6m m
TEST CIRCUIT(f=520MHz)
RD00HVS1
MITSUBISHI ELECTRIC 4/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
S12 (mag) 0.027 0.039 0.043 0.048 0.054 0.058 0.060 0.062 0.063 0.063 0.064 0.063 0.062 0.061 0.060 0.058 0.056 0.054 0.053 0.051 0.048 0.046 (ang) 66.7 56.1 50.7 45.6 37.5 30.2 23.7 18.2 13.3 8.5 4.8 1.1 -2.3 -5.4 -8.6 -11.0 -13.5 -16.2 -17.8 -20.0 -22.1 -23.5 (mag) 0.928 0.889 0.865 0.843 0.796 0.754 0.716 0.688 0.668 0.652 0.640 0.633 0.627 0.626 0.625 0.627 0.630 0.634 0.639 0.645 0.654 0.661 S22 (ang) -24.7 -36.5 -42.0 -47.2 -56.4 -64.4 -71.5 -77.6 -83.4 -88.7 -93.3 -97.9 -102.1 -105.9 -109.6 -113.4 -116.8 -120.0 -123.3 -126.4 -129.3 -132.1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.004 0.987 0.972 0.957 0.929 0.898 0.875 0.857 0.844 0.831 0.824 0.815 0.810 0.809 0.807 0.806 0.808 0.808 0.810 0.811 0.814 0.817 (ang) -35.2 -51.9 -59.7 -67.1 -80.1 -91.5 -101.4 -110.0 -117.3 -124.1 -130.0 -135.0 -139.9 -144.1 -148.1 -151.8 -155.1 -158.0 -161.1 -163.9 -166.5 -168.9 S21 (mag) (ang) 13.480 158.7 12.911 147.1 12.500 141.6 12.035 136.2 11.030 126.6 10.055 118.7 9.157 111.3 8.322 104.9 7.642 99.3 6.991 93.9 6.432 89.5 5.963 84.9 5.480 80.7 5.103 77.0 4.769 73.1 4.420 69.9 4.161 66.8 3.900 63.1 3.639 60.3 3.466 57.7 3.254 54.1 3.045 51.9
RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.005 0.995 0.980 0.967 0.943 0.916 0.891 0.877 0.862 0.852 0.844 0.835 0.828 0.824 0.823 0.820 0.821 0.822 0.823 0.822 0.826 0.828 (ang) -33.4 -49.7 -57.5 -64.6 -77.5 -88.9 -98.7 -107.6 -115.0 -121.9 -128.1 -133.3 -138.3 -142.7 -146.8 -150.6 -153.9 -157.2 -160.2 -163.1 -165.9 -168.4 S21 (mag) (ang) 13.343 160.0 12.874 149.0 12.525 143.6 12.108 138.3 11.193 129.0 10.249 121.2 9.403 113.9 8.582 107.3 7.916 101.9 7.273 96.4 6.706 91.9 6.224 87.3 5.755 83.0 5.358 79.3 5.024 75.4 4.671 72.0 4.398 68.9 4.134 65.2 3.853 62.3 3.677 59.7 3.459 56.3 3.241 53.9 S12 (mag) 0.024 0.034 0.038 0.042 0.047 0.052 0.054 0.056 0.057 0.057 0.057 0.058 0.056 0.056 0.054 0.053 0.051 0.050 0.048 0.047 0.044 0.042 (ang) 68.3 57.9 53.2 47.8 39.3 32.3 26.2 20.6 15.7 11.2 7.5 3.4 0.2 -2.5 -5.8 -8.4 -10.5 -13.3 -15.2 -17.2 -19.5 -20.2 (mag) 0.898 0.865 0.845 0.826 0.781 0.743 0.709 0.681 0.661 0.644 0.633 0.625 0.619 0.618 0.616 0.615 0.618 0.622 0.628 0.633 0.640 0.646 S22 (ang) -22.6 -33.1 -38.0 -42.9 -51.3 -58.9 -65.6 -71.5 -77.0 -82.0 -86.6 -91.2 -95.2 -99.0 -102.9 -106.6 -110.1 -113.2 -116.5 -119.8 -122.9 -125.7
RD00HVS1
MITSUBISHI ELECTRIC 5/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD00HVS1
MITSUBISHI ELECTRIC 6/6
10 Jan 2006

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