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| RF601B2D Diodes Fast recovery diodes RF601B2D Applications General rectification External dimensions (Unit : mm) 6.50.2 5.10.2 0.1 Land size figure (Unit : mm) 6.0 1.5 0.75 0.9 1 2 3 0.650.1 0.50.1 1.00.2 2.5 Features 1) Power mold type. (CPD) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss C0.5 1.50.3 0.50.1 5.50.3 0.1 9.50.6 CPD 2.3 2.3 Structure 2.30.2 2.30.2 Construction Silicon epitaxial planer ROHM : CPD JEITA : SC-63 Manufacture Date Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 00.5 13.50.2 10.10.1 TL 16.00.2 2.70.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 6 40 150 -55+150 Unit V V A A (*1) Rating of per diode : Io/2 Electrical characteristic (Ta=25C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time Thermal impedance trr jc Min. - Typ. 0.87 0.01 14 - Max. 0.93 10 25 6.0 Unit V A ns /W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE Rev.B 3.0 2.0 1.6 1.6 6.0 2.30.2 0.1 1/3 RF601B2D Diodes Electrical characteristic curves 10 10000 Ta=150 Ta=150 100 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1 Ta=125 Ta=75 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 Ta=75 Ta=25 100 10 0.1 Ta=25 Ta=-25 10 0.01 1 0.1 Ta=-25 0.001 0 100 200 300 400 500 600 700 800 900 1000 1 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 890 FORWARD VOLTAGE:VF(mV) Ta=25 Ta=25 IF=3A IF=3A n=30pcs n=30pcs 100 90 REVERSE CURRENT:IR(nA) Ta=25 VR=200V n=30pcs 150 140 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 80 70 60 50 40 30 20 10 AVE:4.60nA AVE:4.60nA 130 120 110 100 90 80 70 60 50 AVE:99.4pF Ta=25 f=1MHz VR=0V n=10pcs 870 860 AVE:859.4mV 850 AVE:859.4mV 840 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 250 200 150 100 50 0 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 AVE:13.7ns 100 8.3ms 8.3ms 1cyc 10 AVE:126.0A 1 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Ifsm t 100 Mounted on epoxy board 10 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 8 D=1/2 DC 10 Rth(j-c) IM=100mA IF=3A 6 Sin(180) 100 4 1 1ms time 2 300us 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RF601B2D Diodes 15 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 15 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t 10 DC D=1/2 T Io ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV No break at 30kV 25 20 15 10 5 0 t 10 D=1/2 DC 5 Sin(180) VR D=t/T VR=100V T Tj=150 VR D=t/T VR=100V Tj=150 5 Sin(180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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