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RURP1560
Data Sheet August 2004
15A, 400V - 600V Ultrafast Diode
The RURP1560 is an ultrafast diode (trr < 55ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as an energy steering/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09905.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supply * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RURP1560 PACKAGE TO-220AC BRAND RURP1560
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use the entire part number
Symbol
K
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RURP1560 UNITS V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 145oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave 1 Phase 60Hz) Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
600 600 600 15 30 200 100 20 -55 to 175
(c)2004 Fairchild Semiconductor Corporation
RURP1560 Rev. C
RURP1560
Electrical Specifications
TC = 25oC, Unless Otherwise Specified RURP1560 SYMBOL VF IF = 15A IF = 15A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 15A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/s (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current at dIF/dt = 100A/s (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. IF = 15A, dIF/dt = 100A/s IF = 15A, dIF/dt = 100A/s TEST CONDITION MIN TYP 30 20 MAX 1.5 1.2 100 500 55 60 1.5 UNITS V V A A ns ns ns ns
oC/W
Typical Performance Curves
80 IR, REVERSE CURRENT (A) 500 100 IF, FORWARD CURRENT (A) 175oC 10
10
175oC
1.0
100oC
100oC 25oC
0.1
0.01 25oC
1 0 0.5 1.0 VF, FORWARD VOLTAGE (V) 1.5 2.0
0.001 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
(c)2004 Fairchild Semiconductor Corporation
RURP1560 Rev. C
RURP1560 Typical Performance Curves
60
(Continued)
IF(AV), AVERAGE FORWARD CURRENT (A)
16 14 DC 12 10 8 6 4 2 0 120 SQ. WAVE
50
40 t, TIME (ns)
trr
30 ta 20 tb
10
0 1 IF, FORWARD CURRENT (A) 10 20
130
140
150
160
170
180
TC, CASE TEMPERATURE (oC)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
(c)2004 Fairchild Semiconductor Corporation
RURP1560 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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