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| RURP6120CC October 1995 6A, 1200V Ultrafast Dual Diode Package JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 Features * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V * Avalanche Energy Rated * Planar Construction o CATHODE (FLANGE) Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Description The RURP6120CC is an ultrafast dual diode with soft recovery characteristics (tRR < 70ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. PACKAGE AVAILABILITY PART NUMBER RURP6120CC PACKAGE TO-220AB BRAND RUR6120C Symbol d A1 A2 NOTE: When ordering, use the entire part number. Formerly developmental type TA49039. Absolute Maximum Ratings (per leg) TC = +25oC, Unless Otherwise Specified RURP6120CC UNITS V V V A A A W mj oC Peak Repetitive Reverse Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TC = +140oC Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 phase, 60Hz Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1200 1200 1200 6 12 60 50 10 -65 to +175 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 File Number 4051 1 Specifications RURP6120CC Electrical Characteristics (per leg) TC = +25oC, Unless Otherwise Specified RURP6120CC LIMITS SYMBOL VF TEST CONDITION IF = 6A, TC = +25oC IF = 6A, TC = IR +150oC MIN TYP 45 30 400 22 MAX 2.1 1.9 100 500 70 90 3 UNITS V V A A ns ns ns ns nC pF oC/W VR = 1200V, TC = +25oC VR = 1200V, TC = +150oC tRR IF = 1A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s tA tB QRR CJ RJC DEFINITIONS IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s VR = 10V, IF = 0A VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 Q1 +V1 0 t2 t1 R2 +V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 LLOOP DUT Q4 0 0.25 IRM IRM C1 R4 -V4 VRM VR IF dIF dt tA tRR tB t3 0 -V2 R3 Q3 FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 2 RURP6120CC Typical Performance Curves 30 IR , REVERSE CURRENT (A) 500 100 10 +100oC 1 0.1 +25oC 0.01 +175oC IF , FORWARD CURRENT (A) 10 +100oC +175oC 1 +25oC 0.5 0 0.5 1 1.5 2 2.5 3 0.001 0 200 400 600 800 1000 1200 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 90 75 t, RECOVERY TIMES (ns) 60 45 30 15 0 0.5 tRR TC = +25oC, dIF/dt = 200A/s 125 TC = +100oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 100 75 tRR 50 tA 25 tB tA tB 0 0.5 1 IF , FORWARD CURRENT (A) 6 1 IF , FORWARD CURRENT (A) 6 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) 150 125 t, RECOVERY TIMES (ns) 100 tRR 75 50 tA tB TC = +175oC, dIF/dt = 200A/s 6 DC 5 SQ. WAVE 4 3 2 1 0 100 25 0 0.5 1 IF , FORWARD CURRENT (A) 6 115 130 145 160 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE 3 RURP6120CC Typical Performance Curves 100 CJ , JUNCTION CAPACITANCE (pF) (Continued) 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L R + VDD 130 1M DUT VAVL 12V Q2 130 CURRENT SENSE VDD IL IV IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 RURP6120CC Plastic Packages A OP Q H1 D E1 45o D1 TERM. 4 E A1 TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE INCHES SYMBOL A A1 b b1 c D D1 MIN 0.170 0.048 0.030 0.045 0.014 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 TYP 0.200 BSC 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.36 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 TYP 5.08 BSC 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES 3, 4 2, 3 2, 3, 4 5 5 6 2 - L1 b1 b c L 60o 1 2 3 E E1 e e1 J1 e e1 H1 J1 L L1 OP Q LEAD 1. ANODE 1 LEAD 2. CATHODE LEAD 3. ANODE 2 TERM. 4. CATHODE NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 5 |
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