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| SHINDENGEN 3 Phase Bridge Diode Diode Module S10VT60 600V 10A FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate OUTLINE DIMENSIONS Case : 2F SVT Case : (Unit : mm) (VTA type) APPLICATION Big Power Supply Air conditioner Factory Automation, Inverter RATINGS Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, With heatsink, Tc=137 IO Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Ratings -40150 150 600 10 170 110 2 0.8 Unit V A A A2s kV Nm IFSM 2 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode, Tj=25 I t 1mst10msc=25 Vdis Terminals to case, AC 1 minute TOR Recommended torque : 0.6Nm Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions Forward Voltage VF IF=3.5A, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance Ratings Max.1.05 Max.10 Unit V A IR jc VR=VRM, Pulse measurement, Rating of per diode junction to case Max.0.65 /W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S10VTx Forward Voltage 10 Forward Current IF [A] Tc=150C [TYP] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] S10VTx 40 35 Forward Power Dissipation SIN Forward Power Dissipation PF [W] 30 25 20 15 10 5 0 0 5 10 15 20 Average Rectified Forward Current IO [A] Tj = 150C Sine wave S10VTx 25 Derating Curve + - Average Rectified Forward Current IO [A] 20 Heatsink Tc SIN 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM Sine wave R-load with heatsink S10VTx 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied, per diode 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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