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| STS4DNFS30L N-channel 30V - 0.044 - 4A SO-8 STripFETTM MOSFET plus SCHOTTKY rectifier General features MOSFET VDSS 30V SCHOTTKY IF(AV) 3A RDS(on) <0.056 VRRM 30V ID 4A VF(MAX) 0.51V S0-8 Description This product associates the latest low voltage STripFETTM in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. Internal schematic diagram Applications Switching application Order codes Part number STS4DNFS30L Marking S4DNFS30L Package SO-8 Packaging Tape & reel January 2007 Rev 4 1/12 www.st.com 12 Contents STS4DNFS30L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS4DNFS30L Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (vgs = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C dual operation Value 30 30 16 4 2.5 16 2 Unit V V V A A A W PTOT 1. Pulse width limited by safe operating area Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt Schottky absolute maximum ratings Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current TL=125C =0.5 Value 30 20 3 75 1 1 10000 Unit V A A A A A V/s tp = 10 ms Sinusoidal tp = 2 s Repetitive peak reverse current F=1 kHz Non repetitive peak reverse tp = 100 s current Critical rate of rise of reverse voltage Table 3. Rthj-a TJ Tstg Thermal data Thermal resistance junction-ambient MOSFET(1) Junction temperature Storage temperature range 62.5 -55 to 150 -55 to 150 C/W C/W C C 1. Mounted on FR-4 board (steady state) 3/12 Electrical characteristics STS4DNFS30L 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating, TC=125C VGS = 16V VDS = VGS, ID = 250A VGS = 10V, ID = 2A VGS = 5V, ID = 2A 1 0.044 0.051 0.055 0.065 Min. 30 1 10 100 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDD = 24V, ID = 4A, VGS = 5V VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS= 15V, ID=2A Min. Typ. 5 330 90 40 6.5 3.6 2 9 Max. Unit S pF pF pF nC nC nC 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5. Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD=15 V, ID=2A, RG=4.7, VGS=5V (see Figure 12) VDD=15 V, ID=2A, RG=4.7, VGS=5V (see Figure 12) Min. Typ. 11 100 25 22 Max. Unit ns ns ns ns Turn-off delay time Fall time 4/12 STS4DNFS30L Electrical characteristics Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, VGS = 0 ISD = 4A, VDD = 15V di/dt = 100A/s, Tj = 150C (see Figure 14) 35 25 1.4 Test conditions Min Typ. Max 4 16 1.2 Unit A A V ns nC A trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/12 Electrical characteristics STS4DNFS30L 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS4DNFS30L Figure 7. Gate charge vs. gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit STS4DNFS30L 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/12 STS4DNFS30L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STS4DNFS30L SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 10/12 STS4DNFS30L Revision history 5 Revision history Table 8. Date 21-Jun-2004 10-Nov-2006 26-Jan-2007 . Revision history Revision 2 3 4 Complete version The document has been reformatted Typo mistakes on Table 1. Changes 11/12 STS4DNFS30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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