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SemiWell Semiconductor
SCF6C60
Symbol
3. Gate

Silicon Controlled Rectifiers
600
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A ) Low On-State Voltage (1.4V(Typ.)@ ITM) Isolation Voltage ( VISO = 1500V AC )
2. Anode
1. Cathode
TO-220F
General Description
Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM VISO TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings Units
V A A A A2 s A/ W W A V V C C
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature
Half Sine Wave : TC = 100 C 180 Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms
3.8 6 66 21 50 5 0.5 2 5.0
A.C. 1 minute
1500 - 40 ~ 125 - 40 ~ 150
Aug, 2003. Rev. 1
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCF6C60
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 C TC = 125 C ITM = 9 A VAK = 6 V(DC), RL=10 Gate Trigger Current (2) TC = 25 C VD = 6 V(DC), RL=10 Gate Trigger Voltage (2) TC = 25 C VAK = 12 V, RL=100 TC = 125 C 1.5 V 15 mA tp=380 10 200 1.6 ( TC = 25 C unless otherwise noted )
Conditions
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
V
VTM
IGT
VGT
VGD dv/dt
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage
0.2 200

V
Linear slope up to VD = VDRM 67% , Gate open TJ = 125C IT = 100mA, Gate Open
V/
IH Rth(j-c) Rth(j-a)
Holding Current
TC = 25 C Junction to case Junction to Ambient
20
mA
Thermal Impedance Thermal Impedance

4.0 60
C/W C/W
Notes : 1. Pulse Width = 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement.
2/5
SCF6C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
160
10
1
Max. Allowable Case Temperature [ C]
o
VGM(5V) PGM(5W)
140
Gate Voltage [V]
120
= 180
o
25 C
o
IGM(2A)
10
0
PG(AV)(0.5W)
100
80
2
360
60
VGD(0.2V)
10
-1
0
: Conduction Angl e
40
10
-1
10
0
10
1
10
2
10
3
10
4
1
2
3
4
5
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
2
Fig 4. Thermal Response
10
Transient Thermal Impedance [ C/W]
On-State Current [A]
o
1
10
1
125 C
o
0.1
25 C
o
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 -4 10
10
-3
10
-2
10
-1
10
0
10
1
10
2
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
10
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
VGT(25oC)
IGT(25 C)
VGT(t C)
IGT(t C)
o
o
1
1
o
0.1 -50
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
SCF6C60
Fig 7. Typical Holding Current
10
7 = 180
o
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
6 = 60
o
= 90
o
= 120
o
5
= 30
o
IH(25oC)
IH(t C)
4
o
1
3
2
1
0.1 -50
0
50
100
o
150
0
0
1
2
3
4
Junction Temperature[ C]
Average On-State Current [A]
4/5
SCF6C60
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 D 2 3 J K M
G
1. Cathode 2. Anode 3. Gate
N O
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