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SGH10N120RUFD IGBT SGH10N120RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features * * * * * Short circuit rated 10s @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 10A High input impedance CO-PAK, IGBT with FRD : trr = 65ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P GCE E TC = 25C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C SGH10N120RUFD 1200 25 16 10 30 10 60 10 125 50 -55 to +150 -55 to +150 300 Units V V A A A A A s W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 1.0 1.5 40 Units C/W C/W C/W (c)2002 Fairchild Semiconductor Corporation SGH10N120RUFD Rev. B2 SGH10N120RUFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----1 100 V V/C mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V IC = 16A, VGE = 15V 3.5 --5.5 2.3 2.8 7.5 3.0 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---950 75 30 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----20 60 60 150 0.65 0.65 1.3 20 70 80 200 0.75 1.00 1.75 -50 6 25 14 --110 300 --1.85 --150 400 --2.54 -75 9 40 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ s nC nC nC nH VCC = 600 V, IC = 10A, RG = 25, VGE = 15V, Inductive Load, TC = 25C VCC = 600 V, IC = 10A, RG = 25, VGE = 15V, Inductive Load, TC = 125C @ TC = VCC = 600 V, VGE = 15V 100C VCE = 600 V, IC = 10A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25C unless otherwise noted Test Conditions TC = 25C IF = 10A TC = 100C TC = 25C TC = 100C IF = 10A dI/ dt = 200 A/s TC = 25C TC = 100C TC = 25C TC = 100C Min. --------- Typ. 2.9 2.7 65 90 6.0 7.5 195 300 Max. 3.5 -100 -8.0 -400 -- Units V ns A nC (c)2002 Fairchild Semiconductor Corporation SGH10N120RUFD Rev. B2 SGH10N120RUFD 70 60 Common Emitter TC = 25 20V 17V 50 40 Common Emitter VGE = 15V TC = 25 TC = 125 Collector Current, IC [A] Collector Current, IC [A] 50 40 30 20 15V 30 12V 20 VGE = 10V 10 0 0 2 4 6 8 10 10 0 0 2 4 6 8 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 3.4 3.2 Collector - Emitter Voltage, VCE [V] 3.0 2.8 2.6 2.4 2.2 IC = 10A Common Emitter VGE = 15V 16A 20 VCC = 600V Load Current : peak of square wave Load Current [A] 10 Duty cycle : 50% 2.0 1.8 25 50 75 100 125 150 0 0.1 1 10 100 1000 TC = 100 Power Dissipation = 25W Case Temperature, TC [] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 16 20 Common Emitter T C = 125 Collector - Emitter Voltage, V [V] CE Collector - Emitter Voltage, VCE [V] 16 12 12 8 20A 4 I C = 5A 0 0 4 8 12 16 20 8 20A 4 IC = 5A 0 0 4 8 12 16 20 10A 10A Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE (c)2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGH10N120RUFD Rev. B2 SGH10N120RUFD 1500 Common Emitter VGE = 0V, f = 1MHz T C = 25 100 Common Emitter VCC = 600V, VGE = 15V IC = 10A TC = 25 TC = 125 tr td(on) 1200 Cies 900 600 Coes 300 Cres Switching Time [ns] 10 Capacitance [pF] 0 1 10 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, RG [] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 600V, V GE = 15V IC = 10A T C = 25 T C = 125 Common Emitter VCC = 600V, VGE = 15V IC = 10A TC = 25 TC = 125 Switching Time [ns] Switching Loss [J] tf td(off) 100 1000 Eoff Eon Eoff 10 100 10 100 Gate Resistance, RG [] Gate Resistance, RG [] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 100 Common Emitter VGE = 15V, RG = 25 TC = 25 TC = 125 Common Emitter VGE = 15V, RG = 25 T C = 25 T C = 125 tr Switching Time [ns] Switching Time [ns] tf 100 td(on) td(off) 10 5 10 15 20 5 10 15 20 Collector Current, I C [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGH10N120RUFD Rev. B2 SGH10N120RUFD 16 Gate - Emitter Voltage, VGE [V] Common Emitter VGE = 15V, RG = 25 TC = 25 TC = 125 14 Common Emitter R L = 60 T C = 25 600V 400V Eoff Eon Eoff Eon 12 10 8 6 4 2 0 Vcc=200V Switching Loss [J] 1000 100 5 10 15 20 0 10 20 30 40 50 60 Collector Current, IC [A] Gate Charge, Q g [nC] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC MAX. (Pulsed) 10 IC MAX. (Continuous) 1ms DC Operation 1 100s 50s Collector Current, I C [A] Collector Current, Ic [A] 10 0.1 0.01 0.1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 1 10 100 1000 1 1 Safe Operating Area VGE = 20V, T C = 100 10 100 1000 Collector - Emitter Voltage, V CE [V] Collector - Emitter Current, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA 10 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 t1 t2 Pdm single pulse 1E-3 10 -5 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC -4 10 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2002 Fairchild Semiconductor Corporation SGH10N120RUFD Rev. B2 SGH10N120RUFD 50 16 14 VR = 200V IF = 10A T C = 25 T C = 100 Reverse Recovery Current, Irr [A] 6 Forward Current, IF [A] 10 12 10 8 6 4 2 0 100 1 TC = 25 TC = 100 0.1 0 2 4 500 Forward Voltage Drop, VFM [V] di/dt [A/s] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 600 VR = 200V IF = 10A TC = 25 TC = 100 140 VR = 200V IF = 10A TC = 25 TC = 100 Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] 500 500 120 400 100 300 80 200 100 60 0 100 40 100 500 di/dt [A/s] di/dt [A/s] Fig 20. Stored Charge Fig 21. Reverse Recovery Time (c)2002 Fairchild Semiconductor Corporation SGH10N120RUFD Rev. B2 SGH10N120RUFD Package Dimension TO-3P (FS PKG CODE AF) 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation SGH10N120RUFD Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM SMPTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H5 |
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