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| SI7705DN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -20 FEATURES ID (A) - 6.3 - 5.3 - 4.6 rDS(on) (W) 0.048 @ VGS = -4.5 V 0.068 @ VGS = -2.5 V 0.090 @ VGS = -1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.30 mm A S G G 3 4 K 8 7 K D 6 5 D D Bottom View P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a _ Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1" x1" FR4 Board. Document Number: 71607 S-22520--Rev. B, 27-Jan-03 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 10 sec -20 20 "8 - 6.3 -4.5 -20 -2.3 1.0 7 2.8 1.5 2.0 1.0 Steady State Unit V -4.3 -3.1 A -1.1 1.3 0.7 1.1 0.6 -55 to 150 _C W 1 SI7705DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambienta Steady State New Product Device MOSFET Schottky MOSFET Schottky MOSFET Symbol Typical 35 51 Maximum 44 64 94 115 5 12 Unit RthJA 75 91 4 _C/W _ Junction-to-Case (Drain) Steady State Schottky RthJC 10 Notes a. Surface Mounted on 1" x 1" FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -6.3 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -5.3 A VGS = -1.8 V, ID = -1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -6.3 A IS = -2.3 A, VGS = 0 V -20 0.040 0.054 0.070 14 -0.8 -1.2 0.048 0.068 0.090 S V W -0.45 "100 -1 -5 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -6.3 A 11 2.7 1.9 70 75 20 45 105 110 30 70 ns 17 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V Min Typ 0.42 0.33 0.002 0.10 1.5 31 Max 0.48 0.4 0.100 1 10 Unit V Maximum Reverse Leakage Current Irm CT mA Junction Capacitance pF www.vishay.com 2 Document Number: 71607 S-22520--Rev. B, 27-Jan-03 SI7705DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) 2V 12 I D - Drain Current (A) 16 25_C 125_C 12 20 TC = -55_C Vishay Siliconix MOSFET Transfer Characteristics 8 1.5 V 4 1, 0.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 2000 Capacitance r DS(on) - On-Resistance ( W ) 0.16 C - Capacitance (pF) 1600 Ciss 0.12 VGS = 1.8 V 0.08 1200 VGS = 2.5 V VGS = 4.5 V 800 0.04 400 Crss 0 4 Coss 0.00 0 4 8 12 16 20 0 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.3 A 6 1.5 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) VGS = 4.5 V ID = 6.3 A 1.3 4 1.1 2 0.9 0 0 3 6 9 12 15 18 21 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71607 S-22520--Rev. B, 27-Jan-03 www.vishay.com 3 SI7705DN Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.20 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 100 I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.16 TJ = 150_C 1 TJ = 25_C 0.12 ID = 6.3 A 0.08 0.1 0.04 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 935 mA 50 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 40 0.2 Power (W) 30 0.1 20 0.0 10 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75_C/W 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71607 S-22520--Rev. B, 27-Jan-03 SI7705DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix MOSFET 0.2 0.1 0.02 0.1 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F - Forward Current (A) 1 TJ = 150_C 1 0.1 20 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (_C) 150 VF - Forward Voltage Drop (V) Capacitance CT - Junction Capacitance (pF) 120 90 60 30 0 0 4 8 12 16 20 VKA - Reverse Voltage (V Document Number: 71607 S-22520--Rev. B, 27-Jan-03 www.vishay.com 5 SI7705DN Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 6 Document Number: 71607 S-22520--Rev. B, 27-Jan-03 |
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