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SK 8 BGD 065 E Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Values Units Diode - Inverter SEMITOP(R) 2 1-phase bridge rectifier +3-phase bridge inverter SK 8 BGD 065 E Target Data Rectifier Features Characteristics Symbol Conditions IGBT - Inverter min. typ. max. Units Typical Applications Diode - Inverter Diode rectifier Temperatur sensor Mechanical data BGD 1 13-04-2005 SCT (c) by SEMIKRON SK 8 BGD 065 E Fig. 15 Input Bridge Diode forward characteristic Fig. 16 Typical Output Characteristic Fig. 17 Turm-on/-off energy = f(Ic) Fig. 18 Turm-on/-off energy = f(Rg) Fig. 19 Typical gate charge characteristic 2 13-04-2005 SCT (c) by SEMIKRON SK 8 BGD 065 E Fig. 21 Typical switching time vs. Ic Fig. 22 Typical switching time vs. Rg Fig. 24 Typical FWD forward characteristic 3 13-04-2005 SCT (c) by SEMIKRON SK 8 BGD 065 E Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 13-04-2005 SCT (c) by SEMIKRON |
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