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| SLD1231VL High Power Red Laser Diode Description The SLD1231VL is a short wavelength high power laser diode, created as a light source for the nextgeneration high density magneto-optical discs. Features * Red visible light (685nm) * Longitudinal single mode * High power (Recommended optical power output: 30mW) Applications Magneto-optical discs Structure * AlGaInP quantum well structure laser diode Recommended Optical Power Output 30mW Absolute Maximum Ratings * Optical power output Po * Reverse voltage VR * Operating temperature * Storage temperature Package Outline M-274 Reference Slot 0.5 3 1.0 Preliminary Unit : mm For the availability of this product, please contact the sales office. 90 2 1 0 5.6 - 0.025 Window Glass 4.4 MAX 3.7 MAX 1.0 MIN 0.5 MIN 0.4 231 3 - 0.45 PCD 2.0 Optical Distance = 1.35 0.08 35 mW LD 2 V PD 15 V Topr -10 to +50 C Tstg -40 to +85 C Connection Diagram COMMON Pin Configuration 3 PD 2 1 LD 2 1 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- 6.5 LD Chip & Photo Diode 1.2 0.1 Reference Plane 2.6 MAX 0.25 1.26 PE95313-PP SLD1231VL Electrical and Optical Characteristics (Tc = 25C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop Vop p // X, Y, Z // SE As Po = 30mW Po = 30mW Po = 30mW Po = 30mW 0.15 0.60 5 Po = 30mW Po = 30mW Po = 30mW Po = 30mW Po = 30mW 670 19 6 Symbol Conditions Min. Typ. 55 95 2.4 685 23 9 Tc: Case temperature Max. 70 120 3.0 699 27 12 80 3 3 1.0 10 Unit mA mA V nm degree degree m degree degree mW/mA m Differential efficiency Astigmatism Handling Precautions (1) Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Safety goggles for protection from laser beam Laser diode Lens Optical material IR fluorescent plate Optical board Optical power output control device Temperature control device (2) Prevention of surge current and electrostatic discharge Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by a human body. Be great careful about excess current and electrostatic discharge. -2- SLD1231VL Example of Representative Characteristics Optical power output vs. Forward current characteristics 40 TC = 25C Power dependence of far field pattern (Perpendicular to junction) TC = 25C Po -- Optical power output [mW] TC = 0C TC = 50C 20 10 Relative radiant intensity 30 0 0 20 40 60 80 100 120 140 -60 -40 -20 0 20 40 IF -- Forward current [mA] Angle [degree] Po = 30mW Po = 20mW Po = 10mW Po = 5mW 60 Threshold current vs. Temperature characteristics 100 Power dependence of far field pattern (Parallel to junction) TC = 25C Ith -- Threshold current [mA] Relative radiant intensity 50 0 -20 Po = 30mW Po = 20mW Po = 10mW Po = 5mW -60 -40 -20 0 20 40 60 -10 0 10 20 30 40 50 60 Tc -- Case temperature [C] Angle [degree] -3- SLD1231VL Power dependence of spectrum Tc = 25C Po = 30mW Po = 20mW Relative radiant intensity Po = 10mW Po = 5mW 680 685 690 -- Wavelength [nm] 695 -4- SLD1231VL Temperature dependence of spectrum Po = 30mW Tc = 50C Relative radiant intensity Tc = 25C Tc = 0C 660 670 680 690 700 710 -- Wavelength [ nm] -5- |
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