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 SLD323V
High Power Density 1W Laser Diode
Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure2. 1 MOCVD: Metal Organic Chemical Vapor Deposition 2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features * High power Recommended optical power output: Po = 1.0W * Low operating current: Iop = 1.4A (Po = 1.0W) Applications * Solid state laser excitation * Medical use * Material processes * Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25C) * Optical power output Po 1.1 * Reverse voltage VR LD 2 PD 15 * Operating temperature (Tc) Topr -10 to +30 * Storage temperature Tstg -40 to +85 Pin Configuration
W V V C C
2
1
3 1. LD cathode 2. PD anode 3. COMMON Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E93207A81-PS
SLD323V
Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength1 Monitor current Radiation angle (F. W. H. M.) Positional accuracy Differential efficiency Perpendicular Parallel Position Angle Symbol Ith Iop Vop p Imon // X, Y D PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W VR = 10V PO = 1.0W 790 0.3 20 4 Conditions Min.
(Tc: case temperature, Tc = 25C) Typ. 0.3 1.4 2.1 Max. 0.5 2.0 3.0 840 1.5 30 9 6.0 40 17 50 3 PO = 1.0W 0.5 0.9 Unit A A V nm mA degree degree m degree W/A
PO = 1.0W
F. W. H. M. : Full Width at Half Maximum 1 Wavelength Selection Classification Type SLD323V-1 SLD323V-2 SLD323V-3 Type SLD323V-21 SLD323V-24 SLD323V-25 Wavelength (nm) 795 5 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3
Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely.
Laser diode
Lens Optical material
Safety goggles for protection from laser beam
IR fluorescent plate
AP C ATC
Optical boad
Optical power output control device temperature control device
-2-
SLD323V
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
1500 TC = 25C TC = 15C Po - Optical power output [mW] Po - Optical power output [mW] 1200 TC = 0C TC = -10C 900 TC = 25C TC = 30C 1000 TC = 0C TC = -10C TC = 30C
Optical power output vs. Monitor current characteristics
600
500
300
0
400
800
1200
1600
2000
0
0 Imon - Monitor current [mA]
1.5
IF - Forward current [mA]
Threshold current vs. Temperature characteristics
1000
Power dependence of far field pattern (Parallel to junction)
TC = 25C
Ith - Threshold current [mA]
500
Radiation intensity (optional scale)
PO = 1000mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW
100 -10
0
10
20
30
-90
-60
-30
0
30
60
90
Tc - Case temperature [C]
Angle [degree]
Power dependence of far field pattern (Perpendicular to junction)
TC = 25C Radiation intensity (optional scale)
Tempareture dependence of far field pattern (Parallel to junction)
PO = 1000mW Radiation intensity (optional scale)
PO = 1000mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW
TC = 25C TC = 10C TC = -5C
-90
-60
-30
0
30
60
90
-90
-60
-30
0
30
60
90
Angle [degree]
Angle [degree]
-3-
SLD323V
Temperature dependence of far field pattern (Perpendicular to junction)
PO = 1000mW Radiation intensity (optional scale) 820
Dependence of wavelength
Po = 1000mW
p - Wavelength [nm] TC = 25C TC = 10C TC = -5C -60 -30 0 30 60 90
810
800
-90
790 -10
0
10
20
30
Angle [degree]
Tc - Case temperature [C]
Differential efficiency vs. Temperature characteristics
D - Differential efficiency [mW/mA]
1.0
0.5
0
-10
0
10
20
30
Tc - Case temperature [C]
-4-
SLD323V
Power dependence of spectrum
1.0 Tc = 25C Po = 400mW 0.8 Relative rediant intensity Relative rediant intensity 0.8 1.0 Tc = 25C Po = 600mW
0.6
0.6
0.4
0.4
0.2
0.2
802
804
806
808
810
802
804
806
808
810
Wavelength [nm]
Wavelength [nm]
1.0 Tc = 25C Po = 800mW 0.8 Relative rediant intensity Relative rediant intensity
1.0 Tc = 25C Po = 1000mW 0.8
0.6
0.6
0.4
0.4
0.2
0.2
802
804
806
808
810
802
804
806
808
810
Wavelength [nm]
Wavelength [nm]
-5-
SLD323V
Temperature dependence of spectrum (Po = 1.0W)
1.0 Tc = -10C 0.8 Relative radiant intensity Relative radiant intensity 0.8 1.0 Tc = 0C
0.6
0.6
0.4
0.4
0.2
0.2
790
795
800
805
810
815
820
790
795
800
805
810
815
820
Wavelength [nm]
Wavelength [nm]
1.0 Tc = 25C 0.8 Relative radiant intensity Relative radiant intensity
1.0 Tc = 30C 0.8
0.6
0.6
0.4
0.4
0.2
0.2
790
795
800
805
810
815
820
790
795
800
805
810
815
820
Wavelength [nm]
Wavelength [nm]
-6-
SLD323V
Package Outline
Unit: mm
M-248 (LO-11)
Reference Slot
1.0
3 2 1
Photo Diode 0 9.0 - 0.015 7.7 MAX 6.9 MAX 3.5 Window Glass
0.6 MAX
3 - 0.45 PCD 2.54
PACKAGE WEIGHT
0.4
Reference Plane LD Chip Optical Distance = 2.55 0.05
SONY CODE EIAJ CODE JEDEC CODE M-248
-7-
7.0 MAX
1.2g
1.5 3.4 MAX
2.45


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