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| SM3G45,SM3J45 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45,SM3J45 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off-State Voltage : VDRM = 400, 600V l R.M.S ON-State Current l High Commutating (dv / dt) : IT (RMS) = 3A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage SM3G45 SM3J45 SYMBOL VDRM IT (RMS) ITSM It di / dt PGM PG (AV) VGM IGM Tj Tstg 2 RATING 400 600 3 30 (50Hz) 33 (60Hz) 4.5 50 5 0.5 10 2 -40~125 -40~125 UNIT V A A As A / s W W V A C C 2 R.M.S On-State Current (Full Sine Waveform Tc = 111C) Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2.0g TO-220AB 13-10G1A 1 2001-07-13 SM3G45,SM3J45 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC Repetitive Peak Off-State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On-State Voltage Gate Non-Trigger Voltage Holding Current Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of Off-State Voltage at Commutation Thermal Resistance VTM VGD IH dv / dt ITM = 4.5A VD = Rated, Tc = 125C VD = 12V, ITM = 0.2A VD = VDRM, Tj = 125C Exponential Rise VDRM = 400V, (di /dt) c = -2A / ms Tj = 125C Junction to Case, AC IGT VGT VD = 12V RL = 20 SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+), Gate (+) T2 (+), Gate (-) T2 (-), Gate (-) T2 (-), Gate (+) T2 (+), Gate (+) T2 (+), Gate (-) T2 (-), Gate (-) T2 (-), Gate (+) MIN 0.2 100 TYP. MAX 20 1.5 1.5 1.5 20 20 20 1.5 30 V V mA V / s mA V UNIT A (dv / dt) c Rth (j-c) 10 3.3 V / s C / W MARKING NUMBER *1 TYPE SYMBOL SM3G45 SM3J45 MARK M3G45 M3J45 *2 Example 8A : January 1998 8B : Febrary 1998 8L : December 1998 2 2001-07-13 SM3G45,SM3J45 3 2001-07-13 SM3G45,SM3J45 4 2001-07-13 SM3G45,SM3J45 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2001-07-13 |
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