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| 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 SST12L012.4-2.5 GHz Low-Noise Amplifier Preliminary Specifications FEATURES: * * * * * * * Suitable Gain: - Typically 12-13 dB gain across 2.4-2.5 GHz Low Noise Figure: - 1.2-1.5 dB across 2.4-2.5 GHz IIP3: - 3 dBm across 2.4-2.5 GHz Low Current Consumption - 12 mA across 2.4-2.5 GHz 50 Input/Output Matched Packages available - 16-contact UQFN - 3 mm x 1.6 mm All non-Pb (lead-free) devices are RoHS compliant APPLICATIONS: * WLAN * Bluetooth * Wireless Network PRODUCT DESCRIPTION The SST12LN01 is a cost effective Low Noise Amplifier (LNA) which does not require external RF-matching components on PCB applications. This device is based on the 0.5m GaAs PHEMT technology, and complies with 802.11 b/g applications. SST12LN01 provides high-performance, low-noise, and mild-gain operations within the 2.4-2.5 GHz frequency band. Across this frequency band, this device typically provides 12-13 dB gain. This LNA cell is equipped with a self DC-biasing scheme, which helps keep the DC consumption very low during operation. A pair of singled-ended, input and output ports is assigned to the LNA cell with a 50 RF match. The SST12LN01 is offered in a 6-contact UQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications FUNCTIONAL BLOCKS 1 2 3 LNA 6 5 4 1329 F1.0 FIGURE 1: Functional Block Diagram (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 2 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications PIN ASSIGNMENTS Top View (contacts facing down) VDD NC RFIN 1 2 3 NC 1329 6-uqfn P1.0 6 RF and DC GND 0 5 4 RFOUT NC FIGURE 2: Pin Assignments for 16-contact UQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND NC RFIN NC NC RFOUT VDD Pin No. 0 1 2 3 4 5 6 Power Supply No Connection No Connection O PWR T1.0 1329 Pin Name Ground No Connection Type1 Function Unconnected pin I 2.4G RF input Unconnected pin Unconnected pin 2.4G RF output 1. I=Input, O=Output (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 3 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pin 2 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-15 dBm Supply Voltage at pin 6 (VDD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.5V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. Operating Range Range Extended Ambient Temp -20 to +80C VCC 2.9-3.5V TABLE 2: DC Electrical Characteristics Symbol VCC ICC Parameter Supply Voltage at pin 6 Supply Current 2.4-2.5 GHz Min. Typ 3.0 12 Max. Unit V mA T2.0 1329 TABLE 3: AC Electrical Characteristics for Configuration Symbol FL-U G NF IIP3 Parameter Frequency range Small signal gain, 2.4-2.55 GHz Noise Figure, 2.4-2.55 GHz 2.4-2.55 GHz Min. 2400 12 1.14 3 Typ Max. 2550 13 1.5 Unit MHz dB dB dBm T3.2 1329 (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 4 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VDDL = 3.0V, TA = 25C, unless otherwise specified S11 versus Frequency 20 20 10 10 0 0 -10 S12 versus Frequency S11 (dB) -10 S12 (dB) 0 1 2 3 4 5 6 7 8 9 10 -20 -30 -40 -20 -30 -50 -40 -60 0 1 2 3 4 5 6 7 8 9 10 Frequency (G Hz) Frequency (G Hz) S21 versus Frequency 20 20 S22 versus Frequency 10 10 0 0 S21 (dB) -10 S22 (dB) 0 1 2 3 4 5 6 7 8 9 10 -10 -20 -20 -30 -30 -40 -40 0 1 2 3 4 5 6 7 8 9 10 Frequency (G Hz) Frequency (G Hz) 1329-sparm1.1 FIGURE 3: S-Parameters (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 5 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications 3.0 2.5 2.0 Noise Figure (dB) 1.5 1.0 0.5 0.0 1.5 2.0 2.5 3.0 Frequency (GHz) 1329 F4.0 FIGURE 4: Noise Figure versus Frequency (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 6 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications 0 -5 IP1dB (dBm) -10 -15 -20 2.0 2.2 2.4 2.6 2.8 3.0 Frequency (GHz) 1329 F5.0 FIGURE 5: Input P1dB versus Frequency (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 7 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications 10 9 8 7 6 IIP3 (dBm) 5 4 3 2 1 0 2.0 2.2 2.4 2.6 2.8 3.0 Frequency (GHz) 1329 F6.0 FIGURE 6: Input IP3 versus Frequency VDD 0.1 F 1 47 pF 6 50 RFIN 2 3 5 4 RFOUT 1329 app_circuit-1.0 FIGURE 7: Typical Application Circuit (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 8 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications PRODUCT ORDERING INFORMATION SST12LN SSTXXLN 01 XX - QU6 - XXX F X Environmental Attribute F1 = non-Pb/non-Sn contact (lead) finish Package Modifier 6 = 6 contact Package Type QU = UQFN Product Family Identifier Product Type N = Low Noise Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications 1. Environmental suffix "F" denotes non-Pb/non-Sn solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant". Valid combinations for SST12LN01 SST12LN01-QU6F SST12LN01 Evaluation Kits SST12LN01-QU6F-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 9 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications PACKAGING DIAGRAMS TOP VIEW SIDE VIEW 0.15 BOTTOM VIEW 0.475 1 See paddle details Pin #1 1.60 0.10 0.5 BSC 3.00 0.10 0.60 0.50 0.075 0.05 Max 0.3 0.4 0.25 Exposed Paddle Detail 0.25 0.425 See note 2 Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min). 1.25 0.425 0.25 1.80 1mm 6-uqfn-3x1.6-QU6-1.0 FIGURE 8: 6-contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QU6 TABLE 4: Revision History Revision 00 Description Date Sep 2006 * Initial release of data sheet (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 10 2.4-2.5 GHz Low-Noise Amplifier SST12LN01 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales and Marketing Offices NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Country Manager 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101, Taiwan, R.O.C. Tel: +886-2-8698-1168 Fax: +886-2-8698-1169 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Director, Field Applications Engineering Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Kiyomi Akaba Country Manager 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: kakaba@sst.com Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2006 Silicon Storage Technology, Inc. S71329-00-000 9/06 11 |
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