Part Number Hot Search : 
X24008 MOC30 LS656AB BYT42G TMC2011A L6387E AD4C312 319213B
Product Description
Full Text Search
 

To Download ST2304 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION
ST2304
The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
D G
1
1.Gate 2.Source
S
2
3.Drain
3
S04YA
1
S: Subcontractor
2
Y: Year Code W: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 1
N Channel Enchancement Mode MOSFET 2.5A
ST2304
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc
JA
Typical 30 20 2.5 2.0 10 1.25 1.25 0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page2
N Channel Enchancement Mode MOSFET 2.5A
ST2304
ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss VDS=15V,VGS=4.5V IDY 2.5A VDS=10V,VGS=0V F=1MHz 4.5 0.8 1.0 240 110 17 8 12 17 8 10 nC Symbol V(BR)DSS VGS(th) IGSS Condition VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=20V Min Typ Max Unit 30 1.0 3.0 V V
100 nA 1 10 6 4 uA A 0.055 0.07 [ 0.08 0.105 4.6 S 0.77 1.2 V
VDS=30V,VGS=1.0V IDSS VDS=30V,VGS=0V TJ=55J ID(on) VDSU 4.5V,VGS=10V VDSU 4.5V,VGS=4.5V RDS(on) VGS=10V,ID=2.5A VGS=4.5V,ID=2.0A VDS=4.5V,ID=2.5V gfs VSD IS=-1.25A,VGS=0V
pF 20 30 nS 35 20
td(on) tr td(off) tf
VDD=15V,RL=15[ ID=1.0A,VGEN=10V RG=6[
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page3
N Channel Enchancement Mode MOSFET 2.5A SOT-23-3L PACKAGE OUTLINE
ST2304
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page4
N Channel Enchancement Mode MOSFET 2.5A
ST2304
TYPICAL CHARACTERICTICS (25J Unless noted)
Page 5
N Channel Enchancement Mode MOSFET 2.5A
ST2304
TYPICAL CHARACTERICTICS (25J Unless noted)
Page 6


▲Up To Search▲   

 
Price & Availability of ST2304

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X