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| N Channel Enhancement Mode MOSFET 3.5A DESCRIPTION ST2306 The ST2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L / SOT-23 3 FEATURE 30V/3.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.8A, RDS(ON) = 95m-ohm @VGS = 5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L /SOT-23 package design D G 1 1.Gate 2.Source S 2 3.Drain 3 06YA 1 S: Subcontractor 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel Enhancement Mode MOSFET 3.5A ST2306 ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc JA Typical 30 O 20 3.5 2.5 12 1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W J J J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 N Channel Enhancement Mode MOSFET 3.5A ST2306 ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-source On-Resistance Forward Tran conductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss VDS=15V,VGS=4.5V IDY 2.5A VDS=10V,VGS=0V F=1MHz 12.5 2.4 1.0 340 80 40 8 12 17 8 16 nC Symbol V(BR)DSS VGS(th) IGSS IDSS RDS(on) Condition VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=20V VDS=30V,VGS=1.0V VDS=30V,VGS=0V TJ=55J VGS=10V,ID=3.5A VGS=5V,ID=2.8A VDS=4.5V,ID=2.5V IS=-1.25A,VGS=0V Min Typ Max Unit 30 1.0 3.0 V V 100 nA 1 10 uA gfs VSD 0.055 0.07 [ 0.075 0.95 4.6 S 0.77 1.2 V pF 20 30 nS 35 20 td(on) tr td(off) tf VDD=15V,RL=15[ ID=1.0A,VGEN=10V RG=6[ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 3 N Channel Enhancement Mode MOSFET 3.5A SOT-23-3L PACKAGE OUTLINE ST2306 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 4 N Channel Enhancement Mode MOSFET 3.5A SOT-23 PACKAGE OUTLINE ST2306 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 5 N Channel Enhancement Mode MOSFET 3.5A ST2306 TYPICAL CHARACTERICTICS (25J Unless noted) Page 6 N Channel Enhancement Mode MOSFET 3.5A ST2306 TYPICAL CHARACTERICTICS (25J Unless noted) Page 7 N Channel Enhancement Mode MOSFET 3.5A ST2306 Page 8 |
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