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| P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION ST3413 The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE -20V/-3.4A, RDS(ON) = 95m-ohm D G 1 1.Gate 2.Source S 2 3.Drain 3 @VGS = -4.5V -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V - 20V/-1.7A, RDS(ON) = 145m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 13YA 1 2 A: Process Code 1A: Part Marking Y: Year Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enhancement Mode MOSFET -3.4A ST3413 ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc JA Typical -20 +/-12 -2.8 -2.0 -8 -1.4 0.33 0.21 150 -55/150 105 Unit V V A A A W J J J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 P Channel Enhancement Mode MOSFET -3.4A ST3413 ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss VDS=-6V,VGS=-4.5V IDY -2.8A VDS=-6V,VGS=0V F=1MHz 4.8 1.0 1.0 485 85 40 10 13 18 15 8 nC Symbol Condition Min Typ Max Unit -20 -0.8 V V V(BR)DSS VGS=0V,ID=-250uA VGS(th) IGSS IDSS ID(on) RDS(on) VDS=VGS,ID=-250uA -0.35 VDS=0V,VGS=+/-12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55J VDSO -5V,VGS=-4.5V -6.0 VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A VGS=-1.8V,ID=-1.5A VDS=-5V,ID=-2.8V IS=-1.6A,VGS=0V 100 nA -1 -5 uA A 0.076 0.095 0.097 0.120 [ 0.123 0.145 6 S -0.8 -1.2 V gfs VSD pF 25 60 nS 70 60 td(on) tr td(off) tf VDD=-6V,RL=6[ ID=-1A,VGEN=-4.5V RG=6[ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 3 P Channel Enhancement Mode MOSFET -3.4A SOT-23-3L PACKAGE OUTLINE ST3413 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 4 P Channel Enhancement Mode MOSFET -3.4A ST3413 TYPICAL CHARACTERICTICS (25J Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Psge 5 P Channel Enhancement Mode MOSFET -3.4A ST3413 TYPICAL CHARACTERICTICS (25J Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 6 P Channel Enhancement Mode MOSFET -3.4A TYPICAL CHARACTERICTICS ST3413 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 7 |
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