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| STD16NF06 N-Channel 60V - 0.060 - 16A - DPAK STripFETTM II Power MOSFET General features Type STD16NF06 VDSS 60V RDS(on) <0.070 ID 16A 3 1 DPAK TO-252 Typical R DS(on) = 0.060 Exceptional dv/dt Capability 100% Avalanche Tested Application Oriented Characterization Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility Internal schematic diagram Applications Audio Amplifiers Power Tools Automotive Environment Order codes Part Number STD16NF06T4 January 2006 Marking D16NF06 Package TO-252 Packaging TAPE & REEL Rev 1 1/11 www.st.com 11 1 Electrical ratings STD16NF06 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-source Voltage (VGS = 0V) Drain-gate Voltage (RGS = 20 k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor dv/dt EAS TJ Tstg Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 60 60 20 16 11 64 40 0.27 10.5 178 -55 to 175 Unit V V V A A A W W/C V/ns mJ C Symbol VDS VDGR VGS ID ID IDM Note 4 PTOT Table 2. RthJC RthJA Tl Thermal data Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose 3.75 100 275 C/W C/W C 2/11 STD16NF06 2 Electrical characteristics 2 Electrical characteristics ( TCASE = 25 C unless otherwise specified ) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 250A VDS = Max Rating VDS = Max Rating TC=125C VGS = 20V VDS = VGS VGS = 10V ID = 250A ID = 8A 2 0.060 0.070 VGS= 0 Min. 60 1 10 100 Typ. Max. Unit V A A A V Table 4. Symbol gfs Note 5 Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward Transconductance Test Conditions VDS = 25V ID = 8A Min. Typ. 6 400 103 41.5 14.1 2.8 5.4 Max. Unit S pF pF pF nC nC nC Input Capacitance VDS = 15V, f = 1MHz, VGS = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =30 VGS =10V ID = 16A Figure 14 on page 7 Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on Delay Time Rise Time Test Conditions VDD = 30V, ID = 8A, Min. Typ. 4 15 Max. Unit ns ns RG = 4.7, VGS = 10V Figure 13 on page 7 VDD = 30V, ID = 8A, RG = 4.7, VGS = 10V Figure 15 on page 7 Off voltage Rise Time FallTime 16 5.5 ns ns 3/11 2 Electrical characteristics STD16NF06 Table 6. Symbol ISD ISDM Note 4 VSD Note 5 trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8A VGS = 0 49 78 3.2 Test Conditions Min. Typ. Max. 16 64 1.5 Unit A A V ns C A ISD = 16A, di/dt = 100A/s, VDD = 20V, TJ =150C Figure 15 on page 7 Note: 1 Value limited by wire bonding 2 Garanted when external Rg=4.7 and tf < tfmax. 3 Starting TJ = 25C, ID = 19A, VDD = 18V 4 Pulse width limited by safe operating area 5 Pulsed: pulse duration = 300s, duty cycle 1.5% 4/11 STD16NF06 2 Electrical characteristics 2.1 Electrical chraracteristics (curves) Safe Operating Area Figure 2. Thermal Impedance Figure 1. Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Static Drain-Source on Resistance 5/11 2 Electrical characteristics STD16NF06 Capacitance Variations Figure 7. Gate Charge vs Gate-Source Voltage Figure 8. Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs vs Temperature Temperature Figure 11. Source-drain Diode Forward Characteristics Figure 12. Normalized Breakdown Voltage vs Temperature 6/11 STD16NF06 3 Test circuits 3 Test circuits Figure 14. Gate Charge Test Circuit Figure 13. Switching Times Test Circuit For Resistive Load Figure 15. Test Circuit For Inductive Load Switching and Diode Recovery Times Figure 17. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveform 7/11 4 Package mechanical data STD16NF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STD16NF06 4 Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" = = 3 B B2 = = G E 2 L4 1 = = A2 0068772-B 9/11 5 Revision History STD16NF06 5 Revision History Date 10-Jan-2006 Revision 1 First release Description of changes 10/11 STD16NF06 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
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