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| Semiconductor STJ828M P-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * -2.5V Gate drive. * Low threshold voltage : Vth = -0.5~ -1.5V. * High speed. Ordering Information Type NO. STJ828M Marking J828 Package Code TO-92M Outline Dimensions 4.00.1 unit : mm 0.44 REF 0.52 REF 2.15 Typ. 11.85 Typ. 3.00.1 1.27 Typ. 2.54 0.1. 14.00.40 2.30.1. PIN Connections 1. Source 2. Drain 3. Gate 0.7 Typ. 3.00.1 3.8 Min. 0.42 Typ. KST-I016-000 1 STJ828M Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings -20 7 -50 400 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss tON tOFF Test Condition ID=-100A, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V Min. Typ. Max. -20 -0.5 -1.5 -1 1 40 15 10.4 8.4 2.8 0.15 0.13 Unit V V A A mS pF pF pF *. Switching Time Test Circuit = KST-I016-000 2 STJ828M Electrical Characteristic Curves Fig1 ID - VDS Fig2 ID - VDS Fig3 IDR - VDS Fig4 ID - VGS 100 - Fig5 Yfs - ID Fig6 C - VDS KST-I016-000 3 STJ828M Fig7 VDS(on) - ID G Fig8 t - ID - Fig. 9 PD - Ta KST-I016-000 4 |
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