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| (R) STPS1L30 LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS 1A 30 V 150C 0.3 V SMA (JEDEC DO-214AC) STPS1L30A SMB (JEDEC DO-214AA) STPS1L30U Very low forward voltage drop for less power dissipation Optimized conduction/reverse losses trade-off which means the highest yield in the applications Surface mount miniature packages Avalanche capability specified DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection. Packaged in SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Table 2: Order Codes Part Number STPS1L30A STPS1L30U Marking GB3 G23 Value 30 10 TL = 135C = 0.5 tp = 10ms sinusoidal tp = 2s F = 1kHz square tp = 100s square tp = 1s Tj = 25C 1 75 1 1 1500 -65 to + 150 150 10000 Unit V A A A A A W C C V/s 1 dPtot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j - a ) August 2004 REV. 6 1/7 STPS1L30 Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter SMA SMB Value 30 25 Unit C/W Table 5: Static Electrical Characteristics Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 100C Tj = 25C VF * Forward voltage drop Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 380 s, < 2% Min. Typ 6 0.26 0.325 Max. 200 15 0.395 0.3 0.445 0.375 Unit A mA VR = VRRM IF = 1A IF = 2A V To evaluate the conduction losses use the following equation: P = 0.225 x IF(AV) + 0.075 IF (RMS) 2 Figure 1: Average forward power dissipation versus average forward current PF(AV)(W) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.2 0.4 0.6 0.8 Figure 2: Average forward current versus ambient temperature ( = 0.5) IF(AV)(A) 1.2 = 0.05 = 0.1 = 0.2 = 0.5 Rth(j-a)=Rth(j-I) 1.0 0.8 0.6 0.4 Rth(j-a)=120C/W Rth(j-a)=100C/W =1 T 0.2 T IF(AV)(A) =tp/T 1.0 tp 0.0 =tp/T 0 25 tp 50 Tamb(C) 75 100 125 150 1.2 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) 1.2 1 power 0.1 0.8 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 2/7 STPS1L30 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) IM(A) 10 Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB) IM(A) 10 8 8 Ta=25C 6 Ta=25C 6 4 Ta=50C 4 Ta=50C 2 IM t Ta=100C 2 IM t Ta=100C =0.5 t(s) 0 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 1E-3 Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA) Zth(j-c)/Rth(j-c) 1.0 Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMB) Zth(j-c)/Rth(j-c) 1.0 0.8 0.8 0.6 = 0.5 0.6 = 0.5 0.4 = 0.2 0.4 T 0.2 = 0.2 = 0.1 Single pulse T 0.2 = 0.1 Single pulse tp(s) 1E-1 1E+0 1E+1 =tp/T 1E+2 tp 5E+2 0.0 1E-2 tp(s) 1E-1 1E+0 1E+1 0.0 1E-2 =tp/T 1E+2 tp 5E+2 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) IR(mA) 1E+2 Tj=150C Figure 10: Junction capacitance versus reverse voltage applied (typical values) C(pF) 500 F=1MHz Tj=25C 1E+1 Tj=125C Tj=100C 1E+0 100 1E-1 Tj=25C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 10 1 2 VR(V) 5 10 20 30 3/7 STPS1L30 Figure 11: Forward voltage drop versus forward current (typical values, high level) IFM(A) 10.00 Figure 12: Forward voltage drop versus forward current (maximum values, low level) IFM(A) 3.0 2.5 Tj=125C Tj=100C Tj=100C Tj=150C Tj=25C 2.0 1.5 Tj=150C (typical values) 1.00 Tj=25C 1.0 0.5 VFM(V) 0.10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.10 0.15 0.20 0.25 0.30 0.35 VFM(V) 0.40 0.45 0.50 0.55 0.60 Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMA) Rth(j-a)(C/W) 140 120 100 Figure 14: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMB) Rth(j-a)(C/W) 120 100 80 80 60 60 40 20 40 20 S(Cu)(cm) 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 S(Cu)(cm) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/7 STPS1L30 Figure 15: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L Figure 16: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/7 STPS1L30 Figure 17: SMB Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L Figure 18: SMB Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 6/7 STPS1L30 Table 6: Ordering Information Ordering type STPS1L30A STPS1L30U Marking GB3 G23 Package SMA SMB Weight 0.068 g 0.107 g Base qty 5000 2500 Delivery mode Tape & reel Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 7: Revision History Date Jul-2003 Aug-2004 Revision 5A 6 Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Description of Changes Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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