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| STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFETTM II POWER MOSFET TYPE STT3PF20V s s s VDSS !AW RDS(on) 1A!AWA5#$W 1A!$AWA5!&W ID !!A6 s TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s CELLULAR MARKING s STP2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Value 20 20 12 2.2 1.39 8.8 1.6 Unit V V V A A A W Total Dissipation at TC = 25C Ptot () Pulse width limited by safe operating area. October 2002 . Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STT3PF20V THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 -55 to 150 -55 to 150 C/W C C (*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board (**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 12 V Min. 20 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 A ID = 1 A ID = 1 A Min. 0.6 0.14 0.20 0.20 0.25 Typ. Max. Unit V W W DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=15 V ID = 1 A Min. Typ. 4 315 87 17 Max. Unit S pF pF pF VDS = 15V f = 1 MHz, VGS = 0 2/8 STT3PF20V @G@8USD86 GA8C6 S6 8U@SDTUD8TApvrq TXDU8CDIBAPI Tiy q Qhhrr UA9ry hAUvr SvrAUvr W99A2A UrA8qvv AWA D 9A2A A6 Hv U "' " Hh Vv SB 2 #& WA WBTA2A#$AW SrvvrAGhqAAvtrA" Rt Rt R tq UhyABhrA8uhtr BhrT prA8u htr Bhr9hv A8uhtr W992A W AD 92A!6AWBT2#$W "$ "# ' #& 8 8 8 TXDU8CDIBAPAA Tiy qss s Qhhrr UssA9ryhAUvr AhyyAUvr W99A2A UrA8qvv AWA D 9A2A A6 Hv U #$ Hh Vv SB 2 #&W,A WBTA2A#$AW SrvvrAGhqAAvtrA" TPVS8@A9S6DIA9DP9@ Tiy D T9 D T9H A WT9A R D SSH Qhhrr TprqhvA8 r TprqhvA8 rAyrq D T9A2A!A6A D T9A2A!A6 W99A2A AW A W BT A2A A qvqA2A U wA2A 6 $8 $ &$ UrA8qvv Hv U Hh !! '' Vv 6 6 A hqAPAWyhtr ! W SrrrASrp rAUvr SrrrASrp rA8u htr SrrrASrp rA8 r $AE 8 6 rrArApvpvAAvtrA$ Qyrq)AQyrAqhvA2A"AAqAppyrA )QyrAvquAyvvrqAiAhsrArh vtAhrh ThsrAPrhvtA6rh UurhyADrqhpr 3/8 STT3PF20V PA8u hhprvvp UhsrA8uhhprvv p Uhpqph pr ThvpA9hv prAPASrvh pr BhrA8uhtrAABhrprAWyhtr 8hhpvh prAWhvhv 4/8 STT3PF20V IhyvrqABhrAUuruyqAWyhtrA AUrrhr IhyvrqAASrvhprAAUrrhr TprqhvA9vqrAAhqA8uhhprvvp IhyvrqA7rhxq AWyhtrAAUrrhr 5/8 STT3PF20V AvtA )AVpyhrqADqpvrAGhqAUrA8vpv AvtA!)AVpyhrqADqpvrAXhrs AvtA")ATvpuvtAUvrAUrA8vpvAAASrvvrA Ghq AvtA#)ABhrA8uhtrArA8vpv AvtA$)AUrA8vpvAAADqpvrAGhqATvpuvtA 6qA9vqrASrprAUvr 6/8 STT3PF20V SOT23-6L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022 DIM. A A2 A1 b e1 e c L E D E1 7/8 STT3PF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics C 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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