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| STTH120L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) 2 x 60 A 400 V 150 C 0.83 V 50 ns A1 A2 K1 K2 K1 A1 K2 A2 ISOTOP STTH120L04TV1 Features and benefits Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Package insulation voltage: 2500 VRMS Description The STTH120L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 115 C = 0.5 tp = 10 ms sinusoidal Per diode Order codes Part number STTH120L04TV1 Marking STTH120L04TV1 Absolute ratings (limiting values, per diode) Parameter Value 400 120 60 600 -55 to + 150 150 Unit V A A A C C August 2006 Rev 1 1/7 www.st.com 7 Characteristics STTH120L04TV1 1 Characteristics Table 2. Symbol Rth(j-c) Rth(c) Junction to case Total Coupling 0.42 0.1 C/W Thermal resistance Parameter Per diode Value (max). 0.74 Unit When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) VF(2) Static electrical characteristics (per diode) Parameter Reverse leakage current Forward voltage drop Test conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 150 C VR = VRRM Min. Typ Max. 50 A 50 500 1.2 IF = 60 A V 0.83 1.0 Unit 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF2(RMS) Table 4. Symbol Dynamic characteristics (per diode) Parameter Test conditions IF = 1 A dIF/dt = 50 A/s VR = 30 V IF = 1 A dIF/dt = 200 A/s VR = 30 V VR = 200 V IF = 60 A dIF/dt = 100 A/s VR = 200 V IF = 60 A dIF/dt = 100 A/s IF = 60 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 60 A dIF/dt = 200 A/s VFR = 1.1 x VFmax 2.6 0.4 600 ns V Min Typ Max Unit 66 36 90 ns 50 15 A trr Reverse recovery time Tj = 25 C IRM Sfactor tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage Tj = 125 C Tj = 125 C Tj = 25 C Tj = 25 C 2/7 STTH120L04TV1 Characteristics Figure 1. P (W) 80 Conduction losses versus Figure 2. average forward current (per diode) 200 d=0.1 d=0.2 d=0.5 d=1 d=0.05 Forward voltage drop versus forward current (per diode) I FM (A) TJ=150C (Maximum values) 70 60 180 160 140 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 T 120 100 80 60 40 20 0 0.0 0.2 0.4 TJ=150C (Typical values) I F(AV) (A) V FM (V) 0.6 0.8 1.0 TJ=25C (Maximum values) 1.2 1.4 1.6 Figure 3. Relative variation of thermal Figure 4. impedance junction to case versus pulse duration 45 Peak reverse recovery current versus dIF/dt (typical values, per diode) Z th(j-c)/R th(j-c) 1.0 0.9 0.8 0.7 0.6 25 Single pulse I RM (A) IF=IF(AV) VR=200V TJ=125C 40 35 30 0.5 20 0.4 0.3 0.2 0.1 0.0 1.E-03 15 10 5 t P (s) 1.E-02 1.E-01 1.E+00 1.E+01 0 0 50 100 150 dIF /dt(A/s) 200 250 300 350 400 450 500 Figure 5. trr (ns) 250 225 200 175 150 125 100 75 50 25 0 0 50 Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery charges versus dIF/dt (typical values, per diode) 3000 IF=IF(AV) VR=200V TJ=125C Qrr (nC) IF=IF(AV) VR=200V TJ=125C 2500 2000 1500 1000 500 dI F /dt(A/s) 100 150 200 250 300 350 400 450 500 0 0 100 dIF /dt(A/s) 200 300 400 500 3/7 Characteristics STTH120L04TV1 Figure 7. Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8. Relative variations of dynamic parameters versus junction temperature SFACTOR 0.8 0.7 0.6 IF < 2 x IF(AV) VR=200V Tj=125C 1.6 1.4 1.2 1.0 SFACTOR 0.5 0.8 0.4 0.6 0.3 0.4 0.2 0.2 0.1 0.0 0 50 100 150 QRR IF=IF(AV) VR=200V Reference: Tj=125C IRM & tRR dIF /dt(A/s) 200 250 300 350 400 450 500 0.0 25 50 Tj (C) 75 100 125 Figure 9. Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) 1000 900 800 IF=IF(AV) VFR=1.1 x V F max. Tj=125C 8 7 6 VFp ( V ) IF=IF(AV) Tj=125C 700 5 4 3 2 200 1 0 0 50 100 150 100 0 350 400 450 500 0 50 100 150 600 500 400 300 dI F /dt(A/s) 200 250 300 dI F /dt(A/s) 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 100 1 10 VR (V) 100 1000 4/7 STTH120L04TV1 Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) ISOTOP Dimensions Dimensions Ref. Millimeters Min. E G2 Table 5. Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 A C 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 A A1 C2 E2 B C C2 F1 F D D1 E P1 E1 G D1 D S E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 OP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH120L04TV1 3 Ordering information Ordering type Marking Package Weight Base qty Delivery mode Tube STTH120L04TV1 STTH120L04TV1 ISOTOP 27 g 10 (without screws) (with screws) 4 Revision history Date 11-Aug-2006 Revision 1 First issue Description of Changes 6/7 STTH120L04TV1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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