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| (R) STTH16L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (max) FEATURES AND BENEFITS Up to 2 x 10 A 600 V 175C 1.05 V 35 ns A1 K A2 A1 K A2 A2 K A1 Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching & conduction losses TO-220AB STTH16L06CT K TO-220FPAB STTH16L06CFP DESCRIPTION The STTH16L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Table 2: Order Codes Part Number STTH16L06CT STTH16L06CFP Marking STTH16L06CT STTH16L06CFP A2 A1 D2PAK STTH16L06CG Part Number STTH16L06CG STTH16L06GG-TR Marking STTH16L06CG STTH16L06CG Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward voltage Average forward current = 0.5 TO-220AB / D2PAK Tc = 140C Per diode Tc = 135C Per device Tc = 130C Per diode Tc = 120C Per device Tc = 110C Per diode Tc = 80C Per device tp = 10ms sinusoidal Value 600 30 8 16 10 20 8 16 90 -65 to + 175 175 Unit V A A TO-220FPAB IFSM Tstg Tj . Surge non repetitive forward current Storage temperature range Maximum operating junction temperature REV. 1 A C C 1/8 September 2004 STTH16L06C Table 4: Thermal Resistance Symbol Rth(j-c) Junction to case Parameter TO-220AB / D2PAK TO-220FPAB TO-220AB / Rth(c) Coupling D2PAK D2PAK Per diode Per diode Total Total Value (max). 2.5 5 1.6 3.8 0.7 2.5 C/W Unit C/W TO-220FPAB TO-220AB / TO-220FPAB When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics Symbol IR * VF ** Parameter Test conditions VR = VRRM 25 IF = 8A 1.05 IF = 16A 1.28 Tj = 150C Forward voltage drop Tj = 25C Tj = 150C Tj = 25C Tj = 150C Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 1.06 x IF(AV) + 0.036 I F (RMS) * tp = 5 ms, < 2% Min. Typ Max. 8 240 1.8 1.35 2.08 1.64 Unit A Reverse leakage current Tj = 25C V 2 Table 6: Dynamic Characteristics (per diode) Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/s VR =30V Tj = 125C IF = 8A VR = 400V dIF/dt = 100 A/s Tj = 25C Tj = 25C IF = 8A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 8A dIF/dt = 100 A/s VFR = 1.1 x VFmax 3.5 40 4.5 Min. Typ Max. Unit 35 55 6.5 200 A ns V ns 2/8 STTH16L06C Figure 1: Conduction losses versus average forward current (per diode) P(W) 15 Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) 100 = 0.05 = 0.1 = 0.2 = 0.5 90 80 Tj=150C (maximum values) 10 70 =1 60 50 40 Tj=150C (typical values) Tj=25C (maximum values) 5 T 30 20 IF(AV)(A) 0 0 2 4 6 =tp/T 8 tp 10 10 0 0.0 0.5 1.0 1.5 VFM(V) 2.0 2.5 3.0 3.5 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB & D2PAK) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse tp(s) 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 1.E+01 Figure 5: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 18 16 14 12 10 IF=0.5 x IF(AV) VR=400V Tj=125C IF=2 x IF(AV) Figure 6: Reverse recovery time versus dIF/dt (typical values, per diode) trr(ns) 400 350 300 IF=2 x IF(AV) VR=400V Tj=125C IF=IF(AV) 250 200 8 6 4 2 150 100 50 IF=IF(AV) IF=0.5 x IF(AV) dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 3/8 STTH16L06C Figure 7: Reverse recovery charges versus dIF /dt (typical values, per diode) Qrr(nC) 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 1.6 VR=400V Tj=125C IF=2 x IF(AV) Figure 8: Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor 1.4 1.2 IF< 2 x IF(AV) VR=400V Tj=125C IF=IF(AV) 1.0 0.8 0.6 0.4 0.2 IF=0.5 x IF(AV) dIF/dt(A/s) 0.0 100 200 300 400 500 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 Figure 9: Relative variations of dynamic parameters versus junction temperature Figure 10: Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.4 S factor IF=IF(AV) Tj=125C 1.2 1.0 0.8 0.6 0.4 0.2 trr IF=IF(AV) VR=400V Reference: Tj=125C IRM QRR Tj(C) 0.0 25 50 75 100 125 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 Figure 11: Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) 180 160 140 120 100 IF=IF(AV) VFR=1.1 x VF max. Tj=125C Figure 12: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C 10 80 60 40 20 dIF/dt(A/s) 0 0 100 200 300 400 500 1 1 10 VR(V) 100 1000 4/8 STTH16L06C Figure 13: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35m) (D2PAK) Rth(j-a)(C/W) 80 70 60 50 40 30 20 10 SCU(cm) 0 0 5 10 15 20 25 30 35 40 Figure 14: TO-220AB Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 H2 Dia L5 C A L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 5/8 STTH16L06C Figure 15: D2PAK Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0 8 0 8 REF. A E L2 C2 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESSTHAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Figure 16: D2PAK Foot Print Dimensions (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/8 STTH16L06C Figure 17: TO-220FPAB Package Mechanical Data REF. A H B Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.7 0.018 0.027 0.75 1 0.03 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9 9.3 0.354 0.366 3 3.2 0.118 0.126 Table 7: Ordering Information Ordering type STTH16L06CT STTH16L06CG STTH16L06CG-TR STTH16L06CFP Marking STTH16L06CT STTH16L06CG STTH16L06CG STTH16L06CFP Package TO-220AB D2PAK D2PAK TO-220FPAB Weight 2.23 g 1.48 g 1.48 g 1.70 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape & eel Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. (TO-220FPAB) / 0.55 m.N. (TO-220AB) Maximum torque value: 1.0 m.N. (TO-220FPAB) / 0.70 m.N. (TO-220AB) Date 07-Sep-2004 Revision 1 Description of Changes First issue Table 8: Revision History 7/8 STTH16L06C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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