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| SUM75N06-09L New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.0093 @ VGS = 10 V 0.0135 @ VGS = 4.5 V ID (A) 90 62 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D 12-V Automotive Systems - Load Switch - Motor Drive - DC/DC D TO-263 G DRAIN connected to TAB G DS Top View SUM75N06-09L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C ID IDM IAR EAR PD PD TJ, Tstg Symbol VDS VGS Limit 60 "20 90 53 160 50 125 125b 3.75c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount )c Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72037 S-22123--Rev. A, 25-Nov-02 www.vishay.com Symbol RthJA RthJC Limit 40 1.2 Unit _C/W _ 1 SUM75N06-09L Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea VGS = 10 V, ID = 30 A, TJ = 175_C rDS(on) VGS = 4.5 V, ID = 30 A VGS = 4.5 V, ID = 30 A, TJ = 125_C VGS = 4.5 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 75 0.0105 75 0.0075 0.0093 0.0163 0.024 0.0135 0.0224 0.030 S W 60 1 2 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.4 W ID ] 90 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 90 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2400 430 210 47 12 13 7 30 25 12 12 50 40 20 ns 75 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms m IF = 90 A, VGS = 0 V 40 2 0.040 160 90 A 180 1.4 80 4 0.16 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72037 S-22123--Rev. A, 25-Nov-02 SUM75N06-09L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 VGS = 10 thru 5 V 120 I D - Drain Current (A) I D - Drain Current (A) 120 160 Vishay Siliconix Transfer Characteristics 80 4V 80 40 3V 0 0 2 4 6 8 10 40 TC = 125_C 25_C -55 _C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = -55_C r DS(on) - On-Resistance ( W ) 100 g fs - Transconductance (S) 25_C 80 125_C 60 0.017 0.020 On-Resistance vs. Drain Current 0.014 0.011 VGS = 4.5 V 40 VGS = 10 V 0.008 20 0 0 10 20 30 40 50 60 0.005 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 4000 20 Gate Charge 3200 C - Capacitance (pF) Ciss 2400 V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 1600 8 800 Coss Crss 0 10 20 30 40 50 60 4 0 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Document Number: 72037 S-22123--Rev. A, 25-Nov-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM75N06-09L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 Drain Source Breakdown vs. Junction Temperature 76 100 IAV (A) @ TA = 25_C I Dav (a) V (BR)DSS (V) 72 ID = 10 mA 10 68 1 64 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 60 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72037 S-22123--Rev. A, 25-Nov-02 SUM75N06-09L New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche Drain Current vs. Case Temperature 90 1000 Safe Operating Area, Junction-to-Case Limited by rDS(on) 75 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 ms 100 ms 45 10 1 ms 10 ms dc, 100 ms TC = 25_C Single Pulse 30 1 15 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 72037 S-22123--Rev. A, 25-Nov-02 www.vishay.com 5 |
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