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| Semiconductor SUR481H NPN/PNP epitaxial planar Silicon Transistor Description * Digital transistor Features * Both SRC1210 chip and SRA2210 chip in SOT-353 package Ordering Information Type NO. SUR481H Marking X4 Package Code SOT-353 Outline Dimensions unit : mm 2.1 BSC 1.25 BSC 3 2 R1 1 1 2 0.15~0.30 5 1.30 BSC 2.0 BSC Tr2 Tr1 R1 3 4 4 5 R1 Tr1 Tr2 4.7K 4.7K 0.25 Min. PIN Connections 1. Emitter 1 2. Base 1 3. Emitter 2 4. Collector 2 5. Collector 1 Base 2 0.90.1 0.1~0.25 0~0.1 KST-5002-000 1 SUR481H Absolute maximum ratings(Tr1, Tr2) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings Tr1 50 50 10 100 150 150 -55 ~ 150 Tr2 -50 -50 -5 -100 Unit V V V mA mW C C Electrical Characteristics(Tr1 : NPN) Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA - Min. Typ. Max. 120 0.1 250 4.7 500 500 0.3 - Unit nA nA V MHz K R1 * : Characteristic of Transistor Only Electrical Characteristics(Tr2 : PNP) Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 4.7 -500 -500 -0.3 - Unit nA nA V MHz K R1 * : Characteristic of Transistor Only KST-5002-000 2 SUR481H Electrical Characteristic Curves Tr1 : NPN Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC Tr2 : PNP Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KST-5002-000 3 |
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