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T820W T830W
SNUBBERLESS TRIAC
FEATURES ITRMS = 8 A VDRM = VRRM = 400V to 700V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Parameter Tc= 95C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2 t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Parameter 400 VDRM VRRM
April 1995
A2
A1
G
A1 A2 G
ISOWATT220AB (Plastic)
Value 8 88 100 50 20 100 - 40 to + 150 - 40 to + 125 260
Unit A A
A2s A/s
C C
Symbol
T820 / 830-xxxW 600 600 700 700
Unit
Repetitive peak off-state voltage Tj = 125C
400
V
1/5
T820W / 830W
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360 conduction angle) Parameter Value 50 3.1 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 100mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 4.5 A/ms Tj= 125C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T820 20 1.5 0.2 2 50 V A mA V/s V/s T830 30 Unit mA V V s IGM = 4 A (tp = 20 s
ITM= 11A tp= 380s VDRM rated VRRM rated
(see note) Tj= 125C
* For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/s, and, therefore, it is unnecessary to use a snuber R-C network accross T820W / T830W triacs.
2/5
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T820W / 830W
Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W)
180 O
P(W)
Tcase (o C)
10
= 180 = 120 = 90
o o o
o
10 8 6 4 2
Rth = 0 o C/W 2.5 o C/W 5 o C/W 7.5 o C/W
-90 -95 -100 -105 -110 -115
8 6 4 2
o
= 60 = 30
I T(RMS) (A)
0 0 1 2 3 4 5 6 7 8
Tamb (oC)
-120 -125
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration.
Zth/Rth 1
Zth (j-c)
10 8
I T(RMS) (A)
= 180
o
0.1
Zt h( j-a)
6 4
0.01
2 Tcase( C) 0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3 1E-2 1E-1 1E +0 1E +1
o
tp (s)
1 E+2 5 E +2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
100
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
Tj initial = 25 C
80
o
60
Ih
40
20
Tj(oC)
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0
1
10
100
1000
3/5
(R)
T820W / 830W
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
Tj initial = 25oC
1000
1000
Tj initial o 25 C
I TSM
100 100
I2t
10
Tj max
10 1
tp(ms)
Tj max Vto =0.9V Rt =0.048
VTM (V)
1 1
10
0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
4/5
(R)
T820W / 830W
PACKAGE MECHANICAL DATA ISOWATT220AB REF.
A B B1 C D E H I J L M N N1 O P
DIMENSIONS Millimeters Inches Min.
10 15.9 9.8 28.6 16 typ 9 4.4 3 2.5 0.4 2.5 4.95 2.4 1.15 0.75 9.3 4.6 3.2 2.7 0.7 2.75 5.2 2.7 1.7 1
Max.
10.4 16.4 10.6 30.6
Min.
0.393 0.626 0.385 1.126 0.630 0.354 0.173 0.118 0.098 0.015 0.098 0.195 0.094 0.045 0.030
Max.
0.409 0.645 0.417 1.204 typ 0.366 0.181 0.126 0.106 0.027 0.108 0.204 0.106 0.067 0.039
Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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