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| Advance Product Information February 10, 2006 K-Band High Power Amplifier Key Features * * * * * * * TGA4022 Frequency Range: 18 - 23 GHz 26 dB Nominal Gain 32.5 dBm Nominal P1dB 15dB Nominal Return Loss Bias 7.0 V, 840 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 3.65 x 3.14 x 0.10 mm (0.144 x 0.124 x 0.004 in) Primary Applications * * * Point-to-Point Radio Point-to-Multipoint Communications K-Band Sat-Com Product Description The TriQuint TGA4022 is a compact High Power Amplifier MMIC for K-band applications. The part is designed using TriQuint's proven standard 0.25 um power pHEMT production process. The TGA4022 nominally provides 32.5dBm of Output Power @ 1dB Gain Compression from 18 - 23GHz. The MMIC also provides 26dB Gain and 15dB typical Return Loss. The part is ideally suited for markets such as Point-to-Point Radio, Point-to-Multipoint Communications, and K-Band Satellite Communications both commercial and military. The TGA4022 is 100% DC and RF tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant. P1dB (dBm) 30 20 Measured Fixtured Data Bias Conditions: Vd =7.0 V, Id =840 mA GAIN S-parameter (dB) 10 0 -10 -20 -30 -40 -50 IRL ORL 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 35 34 33 32 31 30 19.5 20 20.5 21 21.5 22 22.5 23 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig P IN PD T CH TM T STG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous W ave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 8V -1 TO + 0 V 1.5 A 56 mA 26 dBm 7.4 W 150 C 320 C -65 to 150 0C 0 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD . Total current for the entire MMIC. W hen operated at this bias condition with a base plate temperature of 70 0C, the median life is 1.0E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 6/ TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL IDSS,Q1 G M,Q1 V BVGS,Q1 V BVGD,Q1-Q7 V P,Q1-Q14 PARAMETER Saturated Drain Current Transconductance Breakdown Voltage Gate_Source Breakdown Voltage Gate_Drain Pinch-off Voltage MIN. 60 132 -30 -30 -1.5 TYP. 171 210 -15 -16 -1 MAX. 282 318 -8 -12 -0.5 UNITS mA mS V V V Q1 is 600 um FET, Q1-Q7 is 2800 um FET, Q1-Q14 is 8400 um FET. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current, Id Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Pout @ 1dB Gain Compression, P1dB TYPICAL 18 - 23 7.0 840 26 15 20 32.5 UNITS GHz V mA dB dB dB dBm Note: Temperature coefficient on Gain -0.036 dB/0C TABLE IV THERMAL INFORMATION PARAMETER RJC Thermal Resistance (channel to backside of Carrier) TEST CONDITIONS Vd = 7 V Id = 1 A Pdiss = 7 W TCH O ( C) 146 RTJC (qC/W) 10.8 TM (HRS) 1.5 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 Preliminary Measured Data Bias Conditions: Vd = 7.0 V, Id = 840 mA, Room Temperature 28 26 24 22 20 Gain (dB) 18 16 14 12 10 8 6 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 35 34 P1dB (dB m ) 33 32 31 30 19.5 20 20.5 21 21.5 22 22.5 23 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 Preliminary Measured Data Bias Conditions: Vd = 7.0 V, Id = 840 mA, Room Temperature 0 -5 -10 Input Return Loss (dB) -15 -20 -25 -30 -35 -40 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 0 -5 -10 Output Return Loss (dB) -15 -20 -25 -30 -35 -40 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 Preliminary Measured Data Bias Conditions: Vd = 7.0 V, Id = 840 mA, Room Temperature 45 40 35 30 IMD3 (dBc) 25 20 15 10 5 0 19 20 21 22 23 24 25 26 27 28 29 Output Pow er per Tone (dBm) 20GHz 21GHz 22GHz 23GHz 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 Mechanical Drawing 0.992 (0.040) 2.635 (0.104) 3.522 (0.139) 3.140 (0.124) 3.011 (0.119) 2 3 2.077 (0.082) 1 4 1.063 (0.042) 0.129 (0.005) 0 6 5 0.129 (0.005) 0 0.128 (0.005) 0.992 (0.040) 2.635 (0.104) 3.650 (0.144) Units: Millimeters (inches) Thickness: 0.100 (0.004) Chip size to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF Ground is backside of MMIC Bond pad #1: Bond pad #2, #6: Bond pad #3, #5: Bond pad #4: (RF In) (Vg) (Vd) (RF Out) 0.100 X 0.125 0.100 X 0.100 0.200 X 0.100 0.100 X 0.125 (0.004 X 0.005) (0.004 X 0.004) (0.008 X 0.004) (0.004 X 0.005) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 Recommended Chip Assembly Diagram 100uF 10 Ohm 100uF 10 Ohm Vg Vd .01uf .01uf 100pf 100pf RF IN RF OUT 100pf 100pf .01uf .01uf 100uF 10 Ohm Vg 100uF 10 Ohm Vd GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4022 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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