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| Advance Product Information June 30, 2005 DC - 60 GHz Low Noise Amplifier Key Features * * * * * * * * TGA4811 60 GHz Bandwidth 3.0 dB noise figure > 15 dB small signal gain 13 dBm P1dB +/- 7 ps group delay variation Bias: 6V, 50 mA 0.15 um 3MI mHEMT Technology Chip Dimensions: 1.30 x 1.06 x 0.1 mm (0.051 x 0.042 x 0.004) in Measured Data Primary Applications * * * Wideband LNA / gain block Test Equipment 40 Gb/s optical networks Gain (dB) Bias Conditions: Vd = 6 V, Id = 50 mA 18 16 14 12 10 -12 8 6 4 -16 -20 2 0 0 10 20 30 40 50 60 Frequency (GHz) -24 -4 -8 Return Loss (dB) 0 Description The TriQuint TGA4811 is a DC - 60 GHz low noise amplifier that typically provides 15 dB small signal gain and input and output return loss is <10dB. Normal Noise Figure is 3.0 dB from 2 - 40 GHz. P1dB is 13 dBm. The TGA4811 is an excellent choice for Test Equipment, 40Gb/s optical network applications, and general wideband LNA and Gain Block applications. The TGA4811 is 100% RF tested to ensure performance compliance. Lead-Free & RoHS compliant. Samples are available. Output P1dB (dBm) 16 14 12 10 8 6 NF at 4.5V,42 mA P1dB at 6V,52 mA 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) Noise Figure (dB) P1dB at 4.5V,42 mA 4 2 0 Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 1 Advance Product Information June 30, 2005 TGA4811 TABLE I MAXIMUM RATINGS 1/ SYMBOL V + PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 6.5 V -2 TO 0 V 200m A 10 mA TBD 0.69 W 110 C 175 0C -65 to 110 0C 0 NOTES 2/ VI + IG PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ 3/ 2/ 4/ 5/ These ratings represent the maximum operable values for this device. Combinations of resistors voltage and 3V (MAX) on mHEMT. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of 70 oC, the median life will be reduced. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 2 Advance Product Information June 30, 2005 TGA4811 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Drain Voltage Quiescent Current Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Reverse Isolation, S12 Output Power (P1dB) Power @ saturated, Psat Noise figure TYPICAL 6 50 15 10 15 -40 13 15 3.0 UNITS V mA dB dB dB dB dBm dBm dB TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of package) Test Conditions Vd = 6 V ID = 0.05 A Pdiss = 0.3 W TCH (oC) 80 RTJC (qC/W) 33.3 TM (HRS) 8.7E8 Note: Die backside epoxy attached to carrier at 70C baseplate temperature. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 3 Advance Product Information June 30, 2005 TGA4811 Measured Data Bias Conditions: Vd = 6 V, Id = 50 mA 18 16 14 12 Gain (dB) 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 Frequency (GHz) 0 -4 -8 -12 -16 -20 -24 Return Loss (dB) 16 14 Output P1dB (dBm) 12 10 8 6 NF at 4.5V,42 mA P1dB at 6V,52 mA 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) Noise Figure (dB) P1dB at 4.5V,42 mA 4 2 0 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 4 Advance Product Information June 30, 2005 TGA4811 Measured Data Bias Conditions: Vd = 6 V, Id = 50 mA 70 60 Group Delay (ps) 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Frequency (GHz) 20 18 16 14 4.5V, 42mA 6V, 52mA 26 24 22 20 18 16 14 6V, 52mA Output Power (dBm) Gain (dB) 12 10 8 6 4 2 0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 4.5V, 42mA 12 10 8 6 Pin (dBm) TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 5 Advance Product Information June 30, 2005 TGA4811 Mechanical Drawing Vg2 VD RF OUT RF IN VG1 Units: millimeters Thickness: 0.1 Chip edge to bond pad dimension are shown to center of bond pad. Chip size tolerance: 0.051 VD VG1 VG2 RF IN RF OUT Pad size (mm) 0.10x0.10 0.10x0.10 0.10x0.10 0.10x0.10 0.10x0.10 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 6 Advance Product Information June 30, 2005 TGA4811 Chip Assembly Diagram Vg2 Vd 0.1uF 100pF 1800pF RF OUT RF IN 1800pF 0.1uF Vg1 3 (Three) 0.7 mil chisel bond wires at RF IN and RF OUT or 1 (one) 3 mil ribbon at RF IN and RF OUT. Vg2 is optional for the circuit. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 7 Advance Product Information June 30, 2005 TGA4811 Optional Testing Circuit Schematic 1800pF 0.1uF Vd (No Connection) VDT Vg2 (No Connection) 100pF Vd(RFout) TGA4811 RF(in) DC Block (PSPL 5509) Bias Tee (PSPL 5542) RF(out) Vg1 1800pf 0.1uF TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 8 Advance Product Information June 30, 2005 TGA4811 Assembly Process Notes Reflow process assembly notes: * * * * Use epoxy with limited exposure to temperatures at 175oC. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 175oC. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 9 |
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