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TN3440A
TN3440A
C
TO-226
B E
NPN General Purpose Amplifier
This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
250 300 7.0 100 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TN3440A 1.0 8.0 125 50
Units
W mW/C C/W C/W
1997 Fairchild Semiconductor Corporation
TN3440A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus) V(BR)CBO ICEO ICEX ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current Collector-Cutoff Current Emitter-Cutoff Current IC = 50 mA, IB = 0 IC = 100 A, IE = 0 VCE = 200 V, IB = 0 VCE = 300 V, VBE = 1.5 V VCB = 250 V, IE = 0 VEB = 5.0 V, IC = 0 250 300 50 500 20 20 V V A A A A
ON CHARACTERISTICS
hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 2.0 mA, VCE = 10 V IC = 20 mA, VCE = 10 V IC = 50 mA, IB = 4.0 mA IC = 50 mA, IB = 4.0 mA 30 40 160 0.5 1.3 V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo hfe Current Gain - Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain IC = 10 mA, VCE = 10 V, f = 5.0 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 5.0 V, IC = 0, f = 1.0 MHz IC = 5.0 mA, VCE = 10 V, f = 1.0 kHz 25 15 10 95 MHz pF pF
*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%
Typical Characteristics
1000 V CE = 5V
25 C 125 C
VCESAT - COLLE CTOR-EMITTER VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain vs Collector Current
Collector-Emitter Saturation Voltage vs Collector Current
0.3 = 10
100
- 40 C
125 C
0.2
25 C
10
0.1
- 40 C
1 0.001
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
TN3440A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1000 800 600 400 200 0
- 40 C
V BE(O N) - BASE- EMITTER ON VOLTAGE (mV)
V BESAT - BASE-E MITTER VOLTAGE (mV)
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
1000 800 600 400 200 0
- 40 C 25 C 125 C
25 C 125 C
= 10
VCE = 5V
1 IC
10 100 - COLLECTOR CURRENT (mA)
1000
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA)
Collector-Base / Emitter-Base Capacitance vs Reverse Bias Voltage
1000 800 600 400 200 100 80 60 40 20
VCB = 225V
100 CAPACITANCE (pF)
C ib, I E = 8
10
1
Ccb, I E = 0
0.1 25
50 75 100 125 T A- AMBIENT TE MPE RATURE (C)
150
10 0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
Contours of Constant Gain Bandwidth Product (f T )
VCE- COLLECTOR VOLTAGE (V) 10
PD - POWER DISSIPATION (W) 1
Power Dissipation vs Ambient Temperature
TO-226
0.75
5
60 MHz
40 MHz
0.5
40 MHz 20 MHz 20 MHz
0.25
1
1
10 100 I C- COLLECTOR CURRENT (mA)
1000
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
TO-226AE Tape and Reel Data
TO -226AE Packaging Conf iguratio n: Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION L OT:
S e Fig 2 e .0 for va rious
HTB:B 10000
Reeli g Styles n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V: QA REV:
D/C1:
D9842
B2
Labe l 5 Reels per Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019 QTY: 2000
Cus tom ized Labe l
F63TNR Labe l Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Labe l 375m m x 267m m x 375mm Int er med iate B ox
AMMO PACK OPTION
S e Fig 3 e .0 for 2 Ammo Pack Option s
TO-226AE TNR/AMMO PACKING INF R O MATION
Packing Reel
Style A E
Qua ntity 2,000 2,000 2,000 2,000
EOL code D26Z D27Z D74Z D75Z
Am m o
M P
FSCINT Labe l 327m m x 158m m x 135mm Im med iate B ox 5 A mm o box es per Int er med iate B ox
Uni t wei gh t Reel weig ht wi th c om po nents Amm o weig ht wi th c omp on en ts
= 0.300g m = 0.868 k g = 0.880 k g
Cus tom ized Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized Labe l
F63TNR Bar c ode Label 333m m x 231m m x 183mm Int er med iate B ox
BULK OPTION
S e Bulk P e acking Informat ion tabl e
Anti -stati c FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP DIMENSION NO L EAD CLIP NO L EAD CLIP NO L EADCLIP
Bub ble Sheets
EOL CO DE J18Z J05Z NO EOL CODE
DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD
QUANTITY 1.0 K / BOX 1.0 K / BOX 1.5 K / BOX
1,500 un its per EO70 box for s td o pti on
114m m x 102m m x 51mm EO70 Im mediate B ox
TO-226 STANDARD STRAIGHT
5 EO70 boxes pe r Int er med iate B ox
530m m x 130m m x 83mm Inter med iate box
Cus tomized Label
FSCINT Labe l 7,500 un its m axim um per interm edi at e box for st d opt ion
(c)2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style Configuration: Fi gure 2.0
Machine Option "A" (H) Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging Configuration: Fi gure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92) FIRST WIRE OFF IS COL LECTOR (ON PKG. 92) ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE D74Z (M)
ORDER STYLE D75Z (P)
FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COL LECTOR ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Tape and Reel T aping Dimension Configuration: Fi gur e 4.0
Hd P Pd
b Hb W1 L H1 HO L1 S
d
WO W2 W
t
t1
P1
F1 DO
P2
ITEM DESCRI PTION Base of P ackage to Le ad Bend Componen Height t Lead Clinch He ight Component Base Heig ht Componen Alignm t ent (s ide / side ) Componen Alignm t ent ( front/bac ) k Componen Pitch t Feed H ole P itch Hole Center to First Lead Hole Center to C omponen C t enter Lead Spread Lead T hickness Cut Le ad Length Taped L ead Le ngt h Taped L ead T hicknes s
SYM BOL b Hb HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S
DIMENSION 0.098 (max) 1.078 ( +/- 0. 050) 0.630 ( +/- 0. 020) 0.748 ( +/- 0. 020) 0.040 (max ) 0.03 (max 1 ) 0.500 ( +/- 0. 020) 0.500 ( +/- 0. 008) 0.150 (+0.009, -0.010 ) 0.247 ( +/- 0. 007) 0.104 ( +/- 0 . 010) 0.018 (+0.002, -0.003) 0.429 (max ) 0.209 (+0.05 -0.052 1, ) 0.032 ( +/- 0. 006) 0.02 ( 1 +/- 0. 006) 0.708 (+0.02 -0.019) 0, 0.236 ( +/- 0. 012) 0.035 (max ) 0.360 ( +/- 0. 025) 0.157 (+0.008, -0.007) 0.004 (max )
PO
User Direction of Feed
TO-226AE Reel Configuration: Fi gur e 5.0
Carrier T ape Thickness Carrier Tape W idth Hold - down T ape W idth Hold - down T ape position Feed H ole P osition Sprocket Hole Diam eter Lead Spring O ut
E LE CT ROS TA TIC S EN SI TIV E D EV ICE S
Note : All d imensions ar in inches. e
D4
D1
ITEM D ESCRIPT IO N
SYMBO L
MINIMUM
MAXIMUM
F63TNR Label
D2
Reel Diamet er Arbor H ole Diam eter (Standard)
D1 D2 D2 D3 D4 W1 W2 W3
13 .975 1.160 0. 0 65 3. 0 10 2. 0 70 0.370 1.630
14 .025 1.200 0.700 3.300 3.100 0.570 1.690 2.09 0
Custom ized Label
(Small H ole) Core D iam eter Hub R ecess Inner Diam eter Hu Recess Dept h b Flange to F lange Inner W idth
W1
Hu b to Hu b Cente r W idth
W3
W2
Note: All dimensions are inches
D3
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.300
S4.70-4.32; S1.52-1.02;
2" TYP
S7.87-7.37;
S7.73-7.10;
S1.65-1.27;
2" TYP
0.51
S0.760.36;
S15.61-14.47;
S0.51-0.36;
S0.48-0.30;
S1.401.14;
S1.40-1.14;
PIN
99 E B C
95 E C B
S4.45-3.81; 1 5" TYP 2 3
1
2
3
TO-226AE (95,99)
S2.41-2.13;
For leadformed option ordering, refer to Tape & Reel data information.
October 1999, Rev. A1
(c)2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

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