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| TSM2832 20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60m RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90m Pin assignment: 1. Gate 2. Drain 3. Source Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2832CY Packing Tape & Reel 1kpcs per reel Package SOT-89 Absolute Maximum Rating (Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 C Ta = 75 oC o Limit 20V 8 3.6 10 1.5 1.0 Unit V V A A W PD Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 - 55 to +150 o o C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rja Limit 5 65 Unit S o C/W TSM2832 1-1 2003/12 rev. A Electrical Characteristics Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS 5V, VGS = 4.5V VDS = 5V, ID = 3.6A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs 20 --0.45 --6 -- -50 75 ----10 -60 90 -1.0 100 --- V m V uA nA A S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 10V, RL = 10, ID = 1A, VGEN = 4.5V, RG = 6 VDS = 10V, ID = 3.6A, VGS = 4.5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------5.2 0.65 1.5 7 55 16 10 450 70 43 10 --15 80 60 25 ---pF nS nC Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% IS VSD ---0.75 1.6 1.2 A V TSM2832 2-2 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2832 3-3 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2832 4-4 2003/12 rev. A SOT-89 Mechanical Drawing A B I DIM A B C D E F J H G C SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 4.05 1.4 0.35 1.20 4.25 1.6 0.44 0.035 0.159 0.055 0.014 0.047 0.167 0.068 0.017 E D G H I J F TSM2832 5-5 2003/12 rev. A |
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