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Semiconductor STK1430DI Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features * High Voltage: BVDSS=300V(Min.) * Low Crss : Crss=21pF(Typ.) * Low gate charge : Qg=31nc(Typ.) * Low RDS(on) :RDS(on)=0.32(Typ.) Ordering Information Type NO. STK1430DI Marking STK1430 Package Code D2-PAK Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source 4. Drain KSD-T6S001-001 1 STK1430DI Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25C) Symbol VDSS VGSS ID (Tc=25) (Tc=100) IDM PD IAS EAS IAR EAR TJ Tstg Rating 300 30 14 14 56 140 14 715 14 18 150 -55~150 Unit V V A A A W A mJ A mJ C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 0.89 62.5 Unit /W KSD-T6S001-001 2 STK1430DI Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=300V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=7A VDS=5V, ID=7A VGS=0V, VDS=25V f=1MHz Min. 300 3.0 - Typ. 0.32 7.8 937 133 21 22 145 45 70 31 7.5 12.5 Max. 5.0 1 100 0.48 1405 200 32 33 217 68 105 47 11.3 19 Unit V V A nA S pF VDD=150V, ID=14A RG=25 - VDS=150V, VGS=10V ID=14A - ns - nC Source-Drain Diode Ratings and Characteristics Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=14A Is=14A, VGS=0, dIS/dt=100A/ us Min - Typ 270 1.8 Max 14 56 1.4 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=5mH, IAS=14A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T6S001-001 3 STK1430DI Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KSD-T6S001-001 4 STK1430DI Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T6S001-001 5 STK1430DI Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6S001-001 6 STK1430DI Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6S001-001 7 STK1430DI The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6S001-001 8 |
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