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| SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ISSUE 1 - NOVEMBER 1995 ZDM4206N D1 D1 D2 D2 PARTMARKING DETAIL - M4206N G1 S1 G2 S2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Continuous Body Diode Current at Tamb =25C Avalanche Current - Repetitive Avalanche Energy - Repetitive Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS ISD IAR EAR Tj:Tstg VALUE 60 1 8 20 1 600 15 -55 to +150 UNIT V A A V A mA mJ C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die "on" Both die "on" equally Derate above 25C* Any single die "on" Both die "on" equally Thermal Resistance - Junction to Ambient* Any single die "on" Both die "on" equally SYMBOL Ptot 2.25 2.75 18 22 55.6 45.5 W W mW/ C mW/ C C/ W C/ W VALUE UNIT * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 317 ZDM4206N ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 300 100 60 20 8 12 12 15 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns VDD 25V, ID=1.5A,VGEN=10V VDS=25V, VGS=0V, f=1MHz ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125C(2) VDS=25V, VGS=10V VGS=10V,ID=1.5A VGS=5V,ID=0.5A VDS=25V,ID=1.5A Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) td(on) tr td(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator TYPICAL CHARACTERISTICS 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 2 6V 5V 4.5V 4V 3.5V 50 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V 10 ID - Drain Current (Amps) 6 ID - Drain Current (Amps) 8 8 6 4 4 2 0 0 10 20 30 40 0 2 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 3 - 318 ZDM4206N TYPICAL CHARACTERISTICS VDS-Drain Source Voltage (Volts) 10 ID - Drain Current (Amps) 6 VDS=10V 4 8 6 4 ID= 3A 1.5A 0.5A 0 2 4 6 8 10 2 2 0 0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics RDS(on)-Drain Source On Resistance () 10 VGS=3.5V 4.5V 6V 8V 10V 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 ce an ist es R ce ur So nai Dr ) on S( RD VGS=10V ID=1.5A 14V 1.0 20V 20V VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0.1 0.1 1.0 10 0 25 50 75 100 125 150 175 200 225 ID-Drain Current (Amps) Tj-Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) v Temperature 1000 1000 gfs-Transconductance (mS) 700 600 500 400 300 200 100 0 0 1 2 gfs-Transconductance (mS) 900 800 VDS=10V 900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VDS=10V 3 4 5 6 7 8 9 10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 3 - 319 |
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