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| SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT749 C1 C1 C2 C2 PARTMARKING DETAIL T749 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -35 -25 -5 -6 -2 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 351 ZDT749 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 100 -0.12 -0.23 -0.9 -0.8 200 200 150 50 160 55 40 450 100 -35 -25 -5 -0.1 -10 -0.1 -0.3 -0.5 -1.25 -1 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-30V VCB=-30V,T amb =100C VEB=-4V, IE=0 IC=1A, IB=-100mA* IC=2A, IB=-200mA* IC=1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* V V V V 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 352 ZDT749 TYPICAL CHARACTERISTICS td tr 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IC/IB=100 ts tf ns 160 IB1=IB2=IC/10 VCE=-10V 140 Switching time ns 1200 120 - (Volts) ts 1000 100 tf 80 600 60 40 tr td V 0.2 0 IC/IB=10 0.001 200 20 0 0.01 0.1 1 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 200 1.0 VCE=2V - (Volts) - Gain 160 0.8 IC/IB=10 120 h 0.6 80 IC/IB=100 V 0.001 0.4 40 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.2 1.0 - (Volts) VCE=2V 0.8 V 0.6 0.4 0.001 0.01 0.1 10 1 IC - Collector Current (Amps) VBE(on) v IC 3 - 353 |
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