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SOT323 NPN SILICON PLANAR RF TRANSISTORS
ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL -- ZUMTS17 - T4 ZUMTS17H - T4H
ZUMTS17 ZUMTS17H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 25 15 2.5 50 25 330 -55 to +150 UNIT V V V mA mA mW C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector Cut-Off Current Static Forward Current Transfer Ratio ZUMTS17H Transition Frequency fT SYMBOL I CBO MIN. TYP. MAX. 10 10 25 20 70 1.0 1.3 Feedback Capacitance Collector Capacitance Emitter Capacitance Noise Figure Intermodulation Distortion -C re C Tc C Te N d im 4.5 -45 0.85 1.5 2.0 150 125 200 GHz GHz pF pF pF dB dB UNIT nA A CONDITIONS. V CB=10V, I E=0 V CB=10V, I E=0, T amb = 100C I C=2.0mA, V CE=1.0V I C=25mA, V CE=1.0V I C=2.0mA, V CE=1.0V I C=2.0mA, V CE=5.0V f=500MHz I C=25mA, V CE=5.0V f=500MHz IC=2.0mA, VCE=5V, f=1MHz IE=Ie=0, VCB=10V, f=1MHz IC=Ic=0, VEB=5.0V, f=1MHz I C=2.0mA, V CE=5.0V R S=50, f=500MHz I C=10mA, V CE=6.0V R L =37.5,T amb=25C Vo=100mV at fp=183MHz Vo=100mV at fq=200MHz measured at f(2q-p) =217MHz
h FE
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device
ZUMTS17 ZUMTS17H
TYPICAL CHARACTERISTICS
80 f=400MHz 2 VCE=10V 1 VCE=5V
hFE - Normalised Gain
3
f T - (GHz)
60
VCE=10V
40
20
0
0.1
1
10
100
1000
1
10
100
1m
10m
100m
IC - Collector Current (mA)
IC - Collector Current (A)
fT v IC
hFE v IC
2.0
f=1MHz
CRE - (pF)
1.5
1.0
0.5 0 10 20 30
VCE - (V)
CRE v VCE
3-

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